采用KrF准分子激光直写刻蚀技术在聚偏氟乙烯(PVDF)材料表面引入刻蚀缺陷，利用刻蚀点缺陷和线缺陷的活性中心作用实现了聚偏氟乙烯表面导电层的快速制备。实验结果表明，通过激光刻蚀在该材料表面产生的刻蚀点或刻蚀线均可起到活性中心的作用，轻易地控制导电层的形成，降低了激光改性阈值，低阈值实现了导电层快速制备的目的。通过激光扫描共聚焦显微镜（LSCM）及扫描电镜（SEM）观察，刻蚀缺陷边缘产生类导电层的二维规整网络微结构，为导电层的初期形式。激光刻蚀过程中的激光热交联反应及激光辐照交联反应的交替作用是聚偏氟乙烯导电层快速产生并大面积形成的主要原因。

A rapid fabrication method for conducting poly(vinylidene fluoride) by creating active centre using KrF excimer laser direct etching technique is demonstrated. Study shows that the etching point-defects and line-defects perform active centre function for facilely controlling conducting layer when laser irradiation decreases the laser threshold. The results of laser scanning confocal microscope(LSCM) and scanning electron microscope(SEM), indicate that the 2D net-like microstructures surround the defects are the precursor of conducting layer, which significantly affect the velocity of preparation. The effect of laser thermal cross-linking reaction and laser irradiation cross-linking reaction together contributes to the rapid formation of great conducting layer.