红外, 2012, 33 (5): 7, 网络出版: 2012-06-04
金属/碲镉汞接<参考文献原文>研究的发展
Research Progress of Metal/Mercury Cadmium Telluride Contacts
金属/半导体接触 金属/半导体界面 金属/碲镉汞接触 欧姆接触 碲镉汞红外探测器 metal/semiconductor contact metal/semiconductor interface metal/mercury cadmium telluride contact ohm contact mercury cadmium telluride infrared detector
摘要
介绍了金属/碲镉汞(Hg1-x Cdx Te, MCT)接触研究的 发展状况，包括基本概念、生长结构、化学活性以及电学性能。金属/MCT接触有两类：一类是电子(欧姆)接触，另一类是整流(Shottky)接触。欧 姆接触是MCT红外探测器的一个重要组成部分，它决定了器件的性能和可靠性。欧姆接触的电阻小，与MCT黏附性好，并且在热循环条件下可保持性能 稳定。由于需要具有较大功函数的接触金属，p型MCT很难实现，而n型MCT则可以用很多金属实现。
Abstract
The development status of metal/mercury cadmium telluride (Hg1-x Cdx Te, MCT) contacts including basic concepts, growth structure, chemical reactivity and electrical properties is presented. There are two types of metal/MCT contacts: electronic (ohm) type and rectifying (Shottky) type. Ohm contacts are the important parts of MCT infrared detectors. They can determine the performance and reliability of MCT devices. Ohm contacts have low resistance and good adhesion to MCT material. They can keep stable behavior against thermal cycling. Since the metal with a larger work function is needed, the contact is difficult to realize for p-type MCT. For n-type MCT, the contacts can be realized with a large variety of metals.
王忆锋, 刘黎明, 孙祥乐, 王丹琳. 金属/碲镉汞接<参考文献原文>研究的发展[J]. 红外, 2012, 33(5): 7. WANG Yi-feng, LIU Li-ming, SUN Xiang-le, WANG Dan-lin. Research Progress of Metal/Mercury Cadmium Telluride Contacts[J]. INFRARED, 2012, 33(5): 7.
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