提出了一种与 CMOS工艺兼容、高响应率、低噪声的微机械热电堆红外探测器。该结构热电偶数目为两对, 材料为 P/N型多晶硅, 吸收层材料为 TiN。采用较少热电偶对的方式来降低噪声, 引入共振谐振腔结构来提高红外吸收率。阐述了探测器的基本工作原理, 通过仿真得到其重要的性能参数, 并给出了器件具体的工艺流程, 对器件尺寸进行了优化。理论上, 其响应率大于 1000 V/W, 探测率大于 2×108 cmHz1/2W-1, 噪声等效温差小于 20 mK, 时间常数小于 10 ms, 电阻值小于 20 kΩ。

A kind of micromechanical thermopile infrared detector that compatible with CMOS process is proposed, which has higher responsivity and lower noise. The detector, whose absorption layer material is TiN, has two pair of thermopiles with P/N polysilicon as the thermopiles material. The resonant cavity is introduced to improve the infrared absorption, while the noise is reduced by the decrease of thermopiles. The basic principle is provided, important performance parameters are obtained by simulation, and fabrication process of the detector is analyzed. The size of the device is optimized. Theoretically, the responsivity can be larger than 1000 V/W, detectivity is larger than 2×108 cmHz1/2W-1, time constant value is smaller than 20 ms, noise equivalent temperature difference is smaller than 30 mK and value of the resistance is smaller than 20 kΩ.