The emergent two-dimensional (2D) material, tin diselenide (SnSe₂), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe₂-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p?n heterostructures have been implemented through a polydimethylsiloxane (PDMS)?assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe₂ heterostructure exhibits a significant responsivity of 4.99 × 10³ A?W^?1, normalized detectivity of 5.80 × 10¹² cm?Hz^1/2?W^?1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe₂ heterostructure are 5.91 × 10³ A?W^?1, 7.03 × 10¹² cm?Hz^1/2?W^?1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe₂, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe₂-based photodetectors and paves the way for their future commercialization.

带隙1.1~1.4 eV的锡铅混合卤化物钙钛矿是单结太阳能电池光电转换效率(PCE)接近Shockley-Queisser (S-Q)理论效率极限值的理想材料。钙钛矿薄膜垂直方向上的化学组分梯度会通过影响能带结构影响载流子的传输和分离, 因此对锡铅混合钙钛矿薄膜的结晶过程进行控制十分重要。本研究发现使用不同剂量的反溶剂制备锡铅混合钙钛矿会形成不同的垂直组分梯度, 并且随反溶剂用量增大薄膜表面铅含量增加。调整溶剂组分可以控制锡铅混合钙钛矿的垂直组分梯度, 增大溶剂中V(DMSO):V(DMF)可以形成底部富铅而表面富锡的垂直组分梯度。当铅基前驱液溶剂中V(DMSO):V(DMF)最优化为1 : 2时, 相比于1 : 4的对照组, 器件在标准光照条件下的开路电压从0.725 V提高到0.769 V, 短路电流密度从30.95 mA·cm^-2提高到31.65 mA·cm^-2, PCE从16.22%提升到接近18%。利用SCAPS软件数值模拟进一步证明了垂直组分梯度的必要性, 当钙钛矿薄膜底部富铅、顶部富锡时, 载流子在空穴传输层界面区域的复合有所减少, 因而电池性能得到提升。

Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics,I_ON/I_OFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics,I_ON/I_OFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.