结合相变材料与马赫-曾德尔干涉仪调制器结构，设计了一种包含ITO微加热器的非易失性光子多值器件，通过对相变材料的结构参数进行仿真，优化了器件的调制窗口。同时对ITO微加热器的结构进行仿真设计，使微加热器的效率更高，更容易实现器件的多值调制。测试表明，该器件在施加电脉冲的过程中实现了超过32个状态（5 bit）的多值调制。这种电调制的非易失性光子多值器件为大规模的非易失性可配置光子硬件神经网络提供了基础的单元。

光催化以其反应条件温和、能直接利用太阳能转化为化学能的优势, 而备受科研人员的关注。如何拓展光谱吸收范围及阻止光生“电子-空穴”复合, 是目前光催化研究领域的热点。本工作通过阳极氧化制备出非晶TiO₂纳米管(TiO₂NTs), 利用机械液压法将熔融铟锡合金压入非晶TiO₂中, 得到In_9.45Sn₁/TiO₂NTs, 再经高温煅烧后得到ITO/TiO₂NTs复合材料。实验对比了TiO₂NTs、In_9.45Sn₁/TiO₂NTs与ITO/TiO₂NTs对去除水溶液中亚甲基蓝的光催化性能, 在180 min光照下, ITO/TiO₂NTs的降解效果最佳, 降解效率达96.14%。利用紫外-可见漫反射光谱(UV-Vis DRS)研究了TiO₂NTs、In_9.45Sn₁/TiO₂NTs和ITO/TiO₂NTs的光吸附性能, ITO/TiO₂NTs的吸光度最强。结合瞬态光电流响应、光电流密度电势、电化学阻抗谱和Mott-Schottky测试结果可知, ITO/TiO₂NTs比TiO₂NTs具有更高的电荷转移能力和供体密度, 抑制了空穴和电子的复合, 从而增强光电化学性能。经过五次循环后, ITO/TiO₂NTs的降解效率保持在90.28%。自由基捕获实验结果表明, •O₂^-和•OH是光催化降解的主要活性物质。

In this study, a batch of indium tin oxide (ITO)/Sn composites with different ratios was obtained based on the principle of thermal evaporation by an electron beam. The crystalline structure, surface shape, and optical characterization of the films were researched using an X-ray diffractometer, an atomic force microscope, a UV-Vis-NIR dual-beam spectrophotometer, and an open-hole Z-scan system. By varying the relative thickness ratio of the ITO/Sn bilayer film, tunable nonlinear optical properties were achieved. The nonlinear saturation absorption coefficient β maximum of the ITO/Sn composites is -10.5×10-7cm/W, approximately 21 and 1.72 times more enhanced compared to monolayer ITO and Sn, respectively. Moreover, the improvement of the sample nonlinear performance was verified using finite-difference in temporal domain simulations.

This paper reports the fabrication of regular large-area laser-induced periodic surface structures (LIPSSs) in indium tin oxide (ITO) films via femtosecond laser direct writing focused by a cylindrical lens. The regular LIPSSs exhibited good properties as nanowires, with a resistivity almost equal to that of the initial ITO film. By changing the laser fluence, the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of ±10%. Furthermore, the average transmittance of the ITO films with regular LIPSSs in the range of 1200–2000 nm was improved from 21% to 60%. The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices—particularly in the near-infrared band.

The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices, which can realize the processing of thick silicon structures. This paper proposes that indium tin oxides (ITO) film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions. ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions, thus reducing the foot effect. The removal and release of ITO use an acidic solution, which does not damage the silicon structure. Therefore, the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure. This method is used in the preparation of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm. The over-etching of the bottom of the silicon structure caused by the foot effect is negligible. The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%. This indicates that ITO is an excellent deep silicon etch stopper material.The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices, which can realize the processing of thick silicon structures. This paper proposes that indium tin oxides (ITO) film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions. ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions, thus reducing the foot effect. The removal and release of ITO use an acidic solution, which does not damage the silicon structure. Therefore, the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure. This method is used in the preparation of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm. The over-etching of the bottom of the silicon structure caused by the foot effect is negligible. The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%. This indicates that ITO is an excellent deep silicon etch stopper material.