半导体光电, 2015, 36 (3): 435, 网络出版: 2015-07-10
基于Pd/SWNT/Al结构的场效应晶体管的研究
Study on The Field-Effect Transistor Based on Pd/SWNT/Al Configuration
碳纳米管 肖特基接触 电子束光刻 碳纳米管场效应晶体管 整流特性 carbon nanotube Schottky contact electron beam lithography carbon nanotube field-effect transistor rectification characteristic
摘要
碳纳米管因具有良好的物理机械性能而得到广泛的研究,其最重要的应用之一是构建场效应晶体管(FET).文章提出并研究了一种非对称接触的单壁碳纳米管场效应晶体管(SWNT-FET),并对其电学特性进行了表征.在该器件中,SWNT被作为FET的沟道,两种不同功函数的金属被用来与SWNT形成肖特基接触;SWNT一端与低功函数金属Al形成源极,另一端与高功函数金属Pd形成漏极.该类器件可应用于下一代纳米集成电路中.
Abstract
Due to its excellent physical and chemical properties,carbon nanotubes (CNTs) have been widely studied and applied in various fields. One of the most important applications for CNTs is to construct the electronic and photoelectric devices.A CNT field-effect transistor with asymmetric contacts is studied in this paper.In the device,individual single-walled CNT is used as the channel,which forms the asymmetrical Schottky contacts with the low work-function metal (aluminum) and the high work-function metal (palladium),respectively.This device is promising to be used in next-generation integrated circuit.
钟汉清, 陈长鑫, 刘晓东, 魏良明, 苏言杰, 张丽英, 张亚非. 基于Pd/SWNT/Al结构的场效应晶体管的研究[J]. 半导体光电, 2015, 36(3): 435. ZHONG Hanqing, CHEN Changxin, LIU Xiaodong, WEI Liangming, SU Yanjie, ZHANG Liying, ZHANG Yafei. Study on The Field-Effect Transistor Based on Pd/SWNT/Al Configuration[J]. Semiconductor Optoelectronics, 2015, 36(3): 435.
PDF全文
