使用固态源MBE系统进行锑化镓基量子阱激光器结构的外延生长，通过优化稳定生长条件，结合标准宽条形激光器制备工艺，获得了在15℃工作温度下823 mW的连续光输出，注入电流0.5 A时，峰值波长为1.98 μm。在1000 Hz，5%占空比的脉冲工作模式下，最大脉冲功率达到1.868 W。

By reducing the Al concentration in waveguide layer and optical confinement layer,stabilizing the epi-growth condition and combining with standard broad-area-laser processing technology,we obtain a continuous output power of 823 mW when working at 15 ℃,the peak wavelengh is 1.96 μm with 0.5 A injection current.In pulsed condition of 1000 Hz and 5% duty cycle, the maximum output power of about 1.86 W is gotten.