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Integrated heterogeneous silicon/III–V mode-locked lasers

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Abstract

The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems, wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low cost, high reliability, and low power consumption, thanks to semiconductor technology. Mode-locked lasers based on silicon photonics advance these qualities by the use of highly advanced silicon manufacturing technology. This paper will begin by giving an overview of mode-locked laser diode literature, and then focus on mode-locked lasers on silicon. The dependence of mode-locked laser performance on design details is presented.

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DOI:10.1364/PRJ.6.000468

基金项目:Defense Advanced Research Projects Agency (DARPA)10.13039/100000185 EPHI and DODOS contracts.

收稿日期:2018-01-12

录用日期:2018-02-12

网络出版日期:2018-02-15

作者单位    点击查看

Michael L. Davenport:Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Songtao Liu:Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
John E. Bowers:Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

联系人作者:Michael L. Davenport(mld01@ece.ucsb.edu)

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引用该论文

Michael L. Davenport, Songtao Liu, and John E. Bowers, "Integrated heterogeneous silicon/III–V mode-locked lasers," Photonics Research 6(5), 468 (2018)

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