红外技术, 2019, 41 (5): 405, 网络出版: 2019-06-22
异质外延碲镉汞薄膜的位错抑制技术
Dislocation Suppression Technique for Heteroepitaxy of HgCdTe Film
异质衬底 碲镉汞 位错抑制 循环退火 腐蚀坑密度 hetero-substrate HgCdTe dislocation suppression cycle annealing etch pit density (EPD)
摘要
本文简述了 MBE异质外延碲镉汞薄膜位错形成机理、位错在外延层中的演化过程以及位错抑制理论，总结了国内外 CdTe缓冲层的位错抑制技术、HgCdTe薄膜的位错抑制技术，分析了热循环退火技术各个要素与位错密度变化之间的关系。
Abstract
The theory about the formation, evolution, and suppression of dislocation of the MBEheteroepitaxy in Hg1-xCdxTe thin films was reviewed in this paper. Furthermore, a dislocation suppressiontechnique using the CdTe buffer and Hg1-xCdxTe film based on the hetero substrate was summarized. Finally,the relationship between key factors of the thermal cycle annealing technique and the change in dislocationdensity was analyzed.
覃钢, 李东升, 夏宗泽, 邸卓, 陈卫业, 杨晋, 杨春章, 李艳辉. 异质外延碲镉汞薄膜的位错抑制技术[J]. 红外技术, 2019, 41(5): 405. QIN Gang, LI Dongsheng, XIA Zongze, DI Zhuo, CHEN Weiye, YANG Jin, YANG Chunzhang, LI Yanhui. Dislocation Suppression Technique for Heteroepitaxy of HgCdTe Film[J]. Infrared Technology, 2019, 41(5): 405.
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