为使边发射高功率单管半导体激光器有源区温度降低, 增加封装结构的散热性能, 降低器件封装成本, 提出一种采用高热导率的石墨片作为辅助热沉的高功率半导体激光器封装结构。利用有限元分析研究了采用石墨片作辅助热沉后, 封装器件的工作热阻更低, 散热效果更好。研究分析过渡热沉铜钨合金与辅助热沉石墨的宽度尺寸变化对半导体激光器有源区温度的影响。新型封装结构与使用铜钨合金作为过渡热沉的传统结构相比, 有源区结温降低4.5 K, 热阻降低0.45 K/W。通过计算可知, 激光器的最大输出功率为20.6 W。在研究结果的指导下, 确定铜钨合金与石墨的结构尺寸, 以达到最好的散热效果。

In order to reduce the temperature of the active region of the high-power single-tube semiconductor laser, increase the heat dissipation performance of the package structure, and reduce the cost of the device package, a high-power semiconductor laser package structure using a high thermal conductivity graphite sheet as an auxiliary heat sink is proposed. Using finite element analysis, the use of graphite sheets as auxiliary heat sinks has been studied, and the packaged devices have lower thermal resistance and better heat dissipation. The effect of the variation of the width dimension of the transition heat sink copper-tungsten alloy and the auxiliary heat sink graphite on the active region temperature of the semiconductor laser was investigated. Compared with the traditional structure using copper-tungsten alloy as the transition heat sink, the new package structure has a junction temperature of 4.5 K and a thermal resistance of 0.45 K/W. According to the calculation, the maximum output power of the laser is 20.6 W. Under the guidance of the research results, the structural dimensions of copper-tungsten alloy and graphite can be determined to achieve the best heat dissipation effect.