为了解决阵列中每个发光点性能分布不均的问题，研究了微通道水冷封装的960 nm半导体激光器阵列，阵列包含38个发光点，腔长为2 mm，在驱动电流为600 A、占空比为10%的条件下，输出的峰值功率达到665.6 W，电光转换效率为63.8%，中心波长为959.5 nm.通过对应力的理论分析，给出了各个发光点应变的表达式；通过搭建单点测试系统获得阵列中每个发光点的阈值电流、斜率效率、光谱和功率等光电特性；结合应变理论分析可知，器件中发光点的性能与应变大小和类型密切相关，压应变会导致器件波长蓝移、阈值电流降低、功率和斜率效率升高，张应变会导致波长红移、阈值电流升高、功率和斜率效率降低.研究表明，影响器件内部发光点的性能不仅与热效应有关，而且与封装后残余的应变密切相关，通过应力的分布可以预测阵列性能的变化规律，可为高峰值功率、高可靠性的半导体激光阵列的研制提供参考.

In order to study the issues of non-uniform performance of the emitters in laser bars, 960 nm laser bars with 38 emitters and cavity length of 2 mm packaged by the microchannel cooler were experimentally studied. The peak output power reaches 665.6 W, the electro-optic conversion efficiency is 63.8%, and the centroid wavelength is 959.5 nm under the driving current of 600 A and the duty ratio of 10%. Firstly, theoretical analysis was made to find out the relationship between the external stress and laser''s parameter changes. Then, the laser photoelectric characteristics parameters such as threshold current, slope efficiency, spectrum and optical power were measured via the test setup. From external stress theory, it is clear that external stress can significantly affect the laser''s parameter performance. Specifically, compressive strain will cause blue-shift in wavelength, decrease in threshold current, and increase in laser and slope efficiency; tensile strain by contrast, will have completely opposite effects on the laser performance. Studies have shown the performance that affects the internal emitters is not only thermal effects, but also residual strain after packaging. The distribution of stress can basically predict the pattern of array performance, which will provide a reference for the development of high peak power, high reliability semiconductor laser arrays.