红色Bi4Ge3O12晶体在低温下的发光性能

用下降法制备了Bi4Ge3O12晶体, 发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi4Ge3O12晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi4Ge3O12在1 150 nm等波长处有较强的发射峰, 强度随温度降低而增强, 衰减时间为几百μs。

Abstract

Red Bi4Ge3O12(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K. A broad emission band was found at around 1 150 nm at T< 200 K, and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.

参考文献

[1] Weber M J, Monchamp R R. Luminescence of Bi4Ge3O12: Spectral and decay properties [J]. J. Appl. Phys., 1973, 44 (12):5495-5499.

[2] Nestor O H, Huang C Y. Bismuth germinate: A high-Z gamma-ray and charged particle detector [J]. IEEE Trans. Nucl. Sci., 1975, NS-2:68-72.

[3] Marinova V, Petrova D, Lin S H, et al. Optical and holographic properties of Fe+Mn co-doped Bi4Ge3O12 crystals [J]. Opt. Commun., 2008, 281(1):37-43.

[4] Shim J B, Yoshikawa A, Bensalah A, et al. Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals [J]. J. Appl. Phys., 2003, 93(9):5131-5135.

[5] Drozdowski W, Wojtowicz A J, Kaczmarek S M, et al. Scintillation yield of Bi4Ge3O12(BGO) pixel crystals [J]. Physica B, 2010, 405(6):1647-1651.

[6] Farhi H, Belkahla S, Lebbou K, et al. BGO fibers growth by μ-pulling down technique and study of light propagation [J]. Physics Procedia, 2009, 2(3):819-825.

[7] Xiao L J, Yan F Q, Xie Y, et al. Preparation and fluorescent properties of Bi3+ doped, Yb3+ doped and Bi3+, Yb3+ codoped Gd2O3 phosphors [J]. Chin. J. Lumin.(发光学报), 2012, 33(4):383-388 (in Chinese).

[8] Zhang J S, Liang Z Q, Zhong H Y, et al. Enhanced red photoluminescence in Eu3+ and Bi3+ codoped LaMgB5O10 based on UV/blue LEDs excitation [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1210-1215 (in Chinese).

[9] Beneventi P, Capelletti R, Kovács L, et al. FTIR spectroscopy of OH stretching modes in BSO, BGO and BTO sillenites [J]. J. Phys.: Condens. Mater., 1994, 6(31):6329-6344.

[10] Whlecke M, Kovács L. OH- ions in oxide crystals [J]. Crit. Rev. Solid State Mater. Sci., 2001, 26(1):1-86.

[11] Gironnet J, Mikhailik V B, Kraus H, et al. Scintillation studies of Bi4Ge3O12(BGO) down to a temperature of 6 K [J]. Nucl. Instr. and Meth. A, 2008, 594(3):358-361.

[12] Jackson R A, Valerio M E G. Computer modelling of radiation generated defects in BGO scintillators [J]. Nucl. Instrum. Meth. B, 2004, 218:145-147.

[13] Kibar R, etin A, Tuncer Y, et al. Cathodoluminescence response from rare earth doped Bi4Ge3O12[J]. Physics Procedia, 2009, 2(2):379-390.

[14] Itoh M, Katagiri T, Mitani H, et al. Comparative study of excitonic structures and luminescence properties of Bi4Ge3O12 and Bi12GeO20 [J]. Phys. Status Solidi B, 2008, 245(12):2733-2736.

[15] Mikhailik V B, Kraus H, Henry S, et al. Scintillation studies of CaWO4 in the millikelvin temperature range [J]. Phys. Rev. B, 2007, 75(18):184308-1-6.

[16] Wang J L, Yin F C, Song Z X, et al. An all-solid-state laser with high stability output power [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):830-833 (in Chinese).

俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi₄Ge₃O₁₂晶体在低温下的发光性能[J]. 发光学报, 2012, 33(8): 828. YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi₄Ge₃O₁₂Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012, 33(8): 828.

红色Bi₄Ge₃O₁₂晶体在低温下的发光性能

关于本站 Cookie 的使用提示

全站搜索