Chinese Optics Letters, 2021, 19 (9): 092501, Published Online: Jul. 8, 2021   

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Author Affiliations
1 School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
2 School of Electronic and Information Engineering, Nanjing University of Information Science & Technology Binjiang College, Wuxi 214105, China
Basic Information
DOI: 10.3788/COL202119.092501
中图分类号: --
栏目: Optoelectronics
项目基金: This work was supported by the National Key R&D Program of China (No. 2016YFB0400902), the National Natural Science Foundation of China (Nos. 61921005 and 62004098), the Natural Science Foundation of Jiangsu Province (No. BK20190302), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.
收稿日期: Jan. 24, 2021
修改稿日期: --
网络出版日期: Jul. 8, 2021
通讯作者: Dong Zhou (dongzhou@nju.edu.cn), Hai Lu (hailu@nju.edu.cn)
备注: --

Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501.

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