Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Linlin Su; Weizong Xu; Dong Zhou; Fangfang Ren; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu

doi:doi:10.3788/COL202119.092501

Chinese Optics Letters, 2021, 19 (9): 092501, Published Online: Jul. 8, 2021

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Linlin Su ^1,2Weizong Xu ¹Dong Zhou ^1,*Fangfang Ren ¹Dunjun Chen ¹Rong Zhang ¹Youdou Zheng ¹Hai Lu ^1,**

Author Affiliations

¹ School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China

² School of Electronic and Information Engineering, Nanjing University of Information Science & Technology Binjiang College, Wuxi 214105, China

Figures & Tables

Fig. 1. Schematic cross section structures of the vertical 4H-SiC (a) n-i-p APD and (b) p-i-n APD; (c) top view image of one fabricated APD.

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Fig. 2. Simulated 2D electric field distribution of a beveled mesa SiC APD under avalanche breakdown voltage. The inset shows the one-dimensional (1D) electric field profile along the black line marked in the 2D electric field profile.

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Fig. 3. I-V and gain-voltage curves of (a) the n-i-p APD and (b) the p-i-n APD; the insets show the enlarged gain regions of the two SiC APDs.

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Fig. 4. Zero-bias spectral response curves of n-i-p and p-i-n APDs.

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Fig. 5. (a) Typical avalanche voltage pulse signal under passive quenching circuit (the inset shows the schematic diagram of passive quenching circuit), (b) the DCR versus normalized overbias curves, (c) the SPDE versus normalized overbias curves, and (d) SPDE versus DCR curves of the n-i-p and p-i-n APDs.

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Fig. 6. Gain-voltage curves measured at 260, 280, and 300 nm illumination for (a) the n-i-p APD and (b) the p-i-n APD. (c) The variation of V_B as a function of UV illumination wavelength.

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Fig. 7. Schematics of the carrier ionization process at different incident light wavelengths for (a) the n-i-p APD and (b) the p-i-n APD. The illumination wavelength varies from deep UV to near UV wavelength regions.

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Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501.

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Fig. 1. Schematic cross section structures of the vertical 4H-SiC (a) n-i-p APD and (b) p-i-n APD; (c) top view image of one fabricated APD.

Fig. 2. Simulated 2D electric field distribution of a beveled mesa SiC APD under avalanche breakdown voltage. The inset shows the one-dimensional (1D) electric field profile along the black line marked in the 2D electric field profile.

Fig. 3. I-V and gain-voltage curves of (a) the n-i-p APD and (b) the p-i-n APD; the insets show the enlarged gain regions of the two SiC APDs.

Fig. 4. Zero-bias spectral response curves of n-i-p and p-i-n APDs.

Fig. 6. Gain-voltage curves measured at 260, 280, and 300 nm illumination for (a) the n-i-p APD and (b) the p-i-n APD. (c) The variation of V_B as a function of UV illumination wavelength.

Fig. 7. Schematics of the carrier ionization process at different incident light wavelengths for (a) the n-i-p APD and (b) the p-i-n APD. The illumination wavelength varies from deep UV to near UV wavelength regions.

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Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Fig. 1. Schematic cross section structures of the vertical 4H-SiC (a) n-i-p APD and (b) p-i-n APD; (c) top view image of one fabricated APD.

Fig. 2. Simulated 2D electric field distribution of a beveled mesa SiC APD under avalanche breakdown voltage. The inset shows the one-dimensional (1D) electric field profile along the black line marked in the 2D electric field profile.

Fig. 3. I-V and gain-voltage curves of (a) the n-i-p APD and (b) the p-i-n APD; the insets show the enlarged gain regions of the two SiC APDs.

Fig. 4. Zero-bias spectral response curves of n-i-p and p-i-n APDs.

Fig. 6. Gain-voltage curves measured at 260, 280, and 300 nm illumination for (a) the n-i-p APD and (b) the p-i-n APD. (c) The variation of VB as a function of UV illumination wavelength.

Fig. 7. Schematics of the carrier ionization process at different incident light wavelengths for (a) the n-i-p APD and (b) the p-i-n APD. The illumination wavelength varies from deep UV to near UV wavelength regions.

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Fig. 6. Gain-voltage curves measured at 260, 280, and 300 nm illumination for (a) the n-i-p APD and (b) the p-i-n APD. (c) The variation of V_B as a function of UV illumination wavelength.