Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Xiaodong Qiu; Zijing Wang; Xiaotong Hou; Xuegong Yu; Deren Yang

doi:doi:10.1364/PRJ.7.000351

Photonics Research, 2019, 7 (3): 03000351, Published Online: Mar. 7, 2019

Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Xiaodong Qiu ¹Zijing Wang ¹Xiaotong Hou ¹Xuegong Yu ^1,2,*Deren Yang ^1,3,*

Author Affiliations

¹ State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

² e-mail: yuxuegong@zju.edu.cn

³ e-mail: mseyang@zju.edu.cn

Figures & Tables

Fig. 1. (a) Fabrication diagram of a Si:Ag sample. (b) Simulation and SIMS data of the silver concentration depth profiles after the ion implantation and after the PLM. (c) The Raman spectra of the Si:Ag samples after the ion implantation and after the PLM. For the samples after PLM, the spectra with and without 950°C annealing are both shown. (d) Spectral absorptance (1-transmittance-reflectance) of the Si:Ag samples after 950°C annealing. The absorptance of the silicon substrate is also shown for comparison.

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Fig. 2. (a) Schematic diagram of fabricated photodetector device components. (b) EQE spectra (900–1600 nm) of the Si:Ag photodetector under reverse bias from 0 V to −3 V with an interval of 0.5 V. (c) EQE increases with the applied reverse bias for 1310 nm and 1550 nm, respectively. (d) The current density-voltage curves of the Si:Ag photodetector in the dark and under the 1310 nm infrared light illumination (0.6 mW ·cm−2).

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Fig. 3. (a) DLTS spectra of the Si:Ag MOS diode for the reverse bias voltage of −3 V, −4 V, and −5 V, respectively. The pulse voltage was set as −1 V. (b) Normalized DLTS signals of the Si:Ag samples subjected to different energy fluence fs-PLM processing.

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Fig. 4. (a) Illustration of the vilible-blind photodetector working mechanism. (b) Spectral absorptance and EQE of the Si:Ag photodetector. (c) Effect of the fs-laser fluence on the normalized EQE spectra (300–1800 nm) of the Si:Ag photodetectors.

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Fig. 5. Illustration of the sub-bandgap and high-gain photoresponse working mechanism.

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Fig. 6. (a) Transient photocurrent of the Si:Ag photodetector measured at −3 V under 1310 nm light illumination. (b) Net photocurrent versus incident photon intensity for 1310 nm wavelength.

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Xiaodong Qiu, Zijing Wang, Xiaotong Hou, Xuegong Yu, Deren Yang. Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon[J]. Photonics Research, 2019, 7(3): 03000351.

Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Fig. 3. (a) DLTS spectra of the Si:Ag MOS diode for the reverse bias voltage of −3 V, −4 V, and −5 V, respectively. The pulse voltage was set as −1 V. (b) Normalized DLTS signals of the Si:Ag samples subjected to different energy fluence fs-PLM processing.

Fig. 4. (a) Illustration of the vilible-blind photodetector working mechanism. (b) Spectral absorptance and EQE of the Si:Ag photodetector. (c) Effect of the fs-laser fluence on the normalized EQE spectra (300–1800 nm) of the Si:Ag photodetectors.

Fig. 5. Illustration of the sub-bandgap and high-gain photoresponse working mechanism.

Fig. 6. (a) Transient photocurrent of the Si:Ag photodetector measured at −3 V under 1310 nm light illumination. (b) Net photocurrent versus incident photon intensity for 1310 nm wavelength.

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Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Fig. 3. (a) DLTS spectra of the Si:Ag MOS diode for the reverse bias voltage of −3 V, −4 V, and −5 V, respectively. The pulse voltage was set as −1 V. (b) Normalized DLTS signals of the Si:Ag samples subjected to different energy fluence fs-PLM processing.

Fig. 4. (a) Illustration of the vilible-blind photodetector working mechanism. (b) Spectral absorptance and EQE of the Si:Ag photodetector. (c) Effect of the fs-laser fluence on the normalized EQE spectra (300–1800 nm) of the Si:Ag photodetectors.

Fig. 5. Illustration of the sub-bandgap and high-gain photoresponse working mechanism.

Fig. 6. (a) Transient photocurrent of the Si:Ag photodetector measured at −3 V under 1310 nm light illumination. (b) Net photocurrent versus incident photon intensity for 1310 nm wavelength.

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