光电子快报（英文版）, 2016, 12 (6): 441, Published Online: Oct. 12, 2017
Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer
Basic Information
| DOI: | 10.1007/s11801-016-6190-3 |
| 中图分类号: | -- |
| 栏目: | |
| 项目基金: | This work has been supported by the National Key Basic Research Program of China (No.2012CB619200), the National Natural Science Foundation of China (No.61474053), the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University (No.20161806),and the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials, Ministry of Education, Jilin University(No.1018320144001). |
| 收稿日期: | Sep. 5, 2016 |
| 修改稿日期: | -- |
| 网络出版日期: | Oct. 12, 2017 |
| 通讯作者: | XIA Mao-sheng (xiams@jlu.edu.cn) |
| 备注: | -- |
WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer[J]. 光电子快报（英文版）, 2016, 12(6): 441.
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