光电子快报(英文版), 2016, 12 (6): 441, Published Online: Oct. 12, 2017  

Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer

Author Affiliations
1 Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer[J]. 光电子快报(英文版), 2016, 12(6): 441.

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WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer[J]. 光电子快报(英文版), 2016, 12(6): 441.

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