Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In<sub>0.82</sub>Ga<sub>0.18</sub>As buffer layer

WEI Qiu-lin; GUO Zuo-xing; ZHAO Lei; ZHAO Liang; YUAN De-zeng; MIAO Guo-qing; XIA Mao-sheng

doi:doi:10.1007/s11801-016-6190-3

光电子快报（英文版）, 2016, 12 (6): 441, Published Online: Oct. 12, 2017

Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer

WEI Qiu-lin ¹GUO Zuo-xing ¹ZHAO Lei ¹ZHAO Liang ¹YUAN De-zeng ¹MIAO Guo-qing ²XIA Mao-sheng ^1,*

Author Affiliations

¹ Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun 130025, China

² State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer[J]. 光电子快报（英文版）, 2016, 12(6): 441.

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Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer