抛光垫磨损非均匀性研究
[1] ZANTYE P B, KUMAR A, SIKDER A K. Chemical mechanical planarization for microelectronics applications[J]. Materials Science & Engineering R Reports, 2004, 45(3-6):89-220.
[2] PIRAYESH H, CADIEN K. Chemical mechanical polishing in the dry lubrication regime: Application to conductive polysilicon[J]. Journal of Materials Processing Technology, 2015, 220:257-263.
[3] LI J, HUANG J D, XIA L, et al. Effect of chemical additive on fixed abrasive pad self-conditioning in CMP[J]. International Journal of Advanced Manufacturing Technology, 2017, 88(1): 107-113.
[4] LIAO X Y, ZHUANG Y, BORUCKI L J, et al. Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process [J]. Japanese Journal of Applied Physics, 2013, 52(52):651-653.
[5] BAISIE E, LI Z C, ZHANG X H. Design optimization of diamond disk pad conditioners[J]. International Journal of Advanced Manufacturing Technology, 2013, 66(9):2041-2052.
[6] YEH H M, CHEN K S. Development of a pad conditioning simulation module with a diamond dresser for CMP applications[J]. International Journal of Advanced Manufacturing Technology, 2010, 50(1-4):1-12.
[7] TSO P L, HO S Y. Factors influencing the dressing rate of chemical mechanical polishing pad conditioning[J]. International Journal of Advanced Manufacturing Technology, 2007, 33(7):720-724.
[8] 苏建修, 高虹, 陈锡渠,等. 基于磨损行为的单晶硅片化学机械抛光材料的去除特性[J]. 纳米技术与精密工程, 2009, 7(3):265-269.
SU Jianxiu, GAO Hong, CHEN Xiqu, et al. Characteristic of material removal in chemical mechanical polishing of silicon wafer based on abrasion behavior[J]. Nanotechnology and Precision Engineering, 2009, 7(3):265-269.
[9] 杨建东, 朱艳秋, 任长根. 机械密封研磨磨具均匀磨损探讨[J]. 农业机械学报, 1998, 29(1):108-112.
YANG Jiandong, ZHU Yanqiu, REN Changgen. Probing lapping tool well-distributed wear in lapping mechanical seals[J]. Transactions of the Chinese society of agricultural machinery, 1998, 29(1):108-112.
[10] LI M, ZHU Y W, LI J, et al. Modeling of polishing pad wear in chemical mechanical polishing[J]. Key Engineering Materials, 2010, 431-432:318-321.
[11] 赵文宏, 周兆忠, 文东辉,等. 定偏心和不定偏心平面研磨均匀性的研究[J]. 金刚石与磨料磨具工程, 2006(3):46-49.
ZHAO Wenhong, ZHOU Zhaozhong, WEN Donghui, et al. Research on uniformity of certain and uncertain eccentricity plane lapping processes[J]. Diamond & Abrasives Engineering, 2006(3):46-49.
[12] NGUYEN N Y, ZHONG Z W, TIAN Y. An analytical investigation of pad wear caused by the conditioner in fixed abrasive chemical–mechanical polishing[J]. International Journal of Advanced Manufacturing Technology, 2015, 77(5):897-905.
[13] NGUYEN N Y, ZHONG Z W, TIAN Y B. Analysis and improvement of the pad wear profile in fixed abrasive polishing[J]. International Journal of Advanced Manufacturing Technology, 2016, 85(5):1159-1165.
[14] LIN Z C, CHEN C C, LIN Z C, et al. Distribution of polishing times for a wafer with different patterned polishing pads during CMP and CCMP[J]. Surface & Coatings Technology, 2010, 204(20):3101-3107.
[15] 张杨, 李秀龙, 徐清兰,等. 双轴式研磨抛光中抛光盘相对位置对去除量的影响研究[J]. 光学技术, 2013, 39(5):408-412.
唐咏凯, 李军, 花成旭, 仝浩呈, 朱永伟, 左敦稳. 抛光垫磨损非均匀性研究[J]. 光学技术, 2017, 43(3): 222. TANG Yongkai, LI Jun, HUA Chengxu, TONG Haocheng, ZHU Yongwei, ZUO Dunwen. Research on wear nonuniformity of polishing pad[J]. Optical Technique, 2017, 43(3): 222.