In2Ge2O7薄膜制备及其紫外光敏特性研究

冯琳; 褚夫同; 唐永旭; 李瑶; 刘兴钊

半导体光电, 2012, 33 (2): 204, 网络出版: 2012-05-22

In₂Ge₂O₇薄膜制备及其紫外光敏特性研究

Preparation and Ultraviolet Photoresponse of In₂Ge₂O₇ Thin Films

冯琳 ^*褚夫同唐永旭李瑶刘兴钊

作者单位

电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054

引用该论文

冯琳, 褚夫同, 唐永旭, 李瑶, 刘兴钊. In₂Ge₂O₇薄膜制备及其紫外光敏特性研究[J]. 半导体光电, 2012, 33(2): 204.

FENG Lin, CHU Futong, TANG Yongxu, LI Yao, LIU Xinzhao. Preparation and Ultraviolet Photoresponse of In₂Ge₂O₇ Thin Films[J]. Semiconductor Optoelectronics, 2012, 33(2): 204.

参考文献

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[8] 王怡, 江伟, 刑光健, 等.TiO2/ZnO薄膜紫外探测器的光电特性[J].半导体光电, 2009,30(4): 513516.

冯琳, 褚夫同, 唐永旭, 李瑶, 刘兴钊. In₂Ge₂O₇薄膜制备及其紫外光敏特性研究[J]. 半导体光电, 2012, 33(2): 204. FENG Lin, CHU Futong, TANG Yongxu, LI Yao, LIU Xinzhao. Preparation and Ultraviolet Photoresponse of In₂Ge₂O₇ Thin Films[J]. Semiconductor Optoelectronics, 2012, 33(2): 204.

In₂Ge₂O₇薄膜制备及其紫外光敏特性研究

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