强激光与粒子束, 2012, 24 (9): 2151, 网络出版: 2012-09-12   

S波段3 GW 相对论速调管放大器的设计

Theoretical design of 3 GW S-band relativistic klystron amplifier
作者单位
1 中国工程物理研究院 研究生部, 北京 100086
2 中国工程物理研究院 应用电子学研究所, 高功率微波重点实验室, 四川 绵阳 621900
3 四川理工学院, 四川 自贡 643000
4 清华大学, 北京 100084
摘要
利用速调管放大器中间腔可以提高器件放大增益,并达到降低微波注入功率的要求,同时针对高功率微波相对论速调管放大器的特点,建立了一个带有两个中间腔的S波段相对论速调管放大器,采用特殊结构克服了多个中间腔引入的高次模影响,模拟上实现了在kW量级微波注入条件下,基波电流调制深度达到80%,输出微波3.3 GW。
Abstract
The introduction of bunching cavities can significantly increase the gain of relativistic klystron amplifier, and correspondingly the power of the seeding microwave can be reduced to a very low level. Though higher gain can be obtained with more bunching cavities, the self-exciting problem will seriously disturb the working mode in the device. A special structure is introduced to deal with such problem. Based on the engineering requirement, a S-band of 3 GW relativistic klystron amplifier is designed with the seeding power 20 kW. In the simulation, the fundamental current modulation depth is 80% and the output microwave power reaches 3.3 GW with the seeding power of kilowatts.
参考文献

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陈永东, 金晓, 李正红, 吴洋, 黄华. S波段3 GW 相对论速调管放大器的设计[J]. 强激光与粒子束, 2012, 24(9): 2151. Chen Yongdong, Jin Xiao, Li Zhenghong, Wu Yang, Huang Hua. Theoretical design of 3 GW S-band relativistic klystron amplifier[J]. High Power Laser and Particle Beams, 2012, 24(9): 2151.

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