Vaughan二次电子发射模型的深入研究与拓展

当前国际上基于Vaughan二次电子模型的材料数据库十分丰富，且其数据均经过大量实验验证，具有很高的实验精度和可信度。为了将这些数据库融入到自主开发的电磁粒子联合模拟平台，完善和提高电磁粒子混合算法的计算精度，在对经典Vaughan模型做了深入研究的基础上，成功地推导出产生二次电子数目的计算方法。此外，为了使经典Vaughan二次电子发射理论更便捷和完整地应用到实际工程应用当中，还对二次电子出射能量以及二次电子出射角度的计算等实际问题做了进一步的拓展性研究。数值计算结果验证了拓展后Vaughan模型算法的准确性和鲁棒性。

Abstract

The material databases for the Vaughan’s secondary electron model which is popularly utilized in the plasma simulation are abundant. Most of them are highly accurate and reliable, due to the validations of experiments. In order to integrate these precious databases into our electromagnetic-particle simulation platform and improve the computational precision of our simulation platform, the classic Vaughan’s model for the secondary electron emission is firstly researched. Based on the derivation of the numerical method to generate the actual number of secondary electrons, the way to calculate the energy of each secondary electron and the method to obtain the emissive angle are successfully proposed. Due to our work, it is more convenient to numerically implement the Vaughan’s theorem in practical applications. Furthermore, the accuracy and the robustness of our proposed methods are validated by the computational results in this paper.

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游检卫, 张剑锋, 李韵, 王洪广. Vaughan二次电子发射模型的深入研究与拓展[J]. 强激光与粒子束, 2013, 25(11): 3035. You Jianwei, Zhang Jianfeng, Li Yun, Wang Hongguang. Research and extension of Vaughan’s secondary electron emission[J]. High Power Laser and Particle Beams, 2013, 25(11): 3035.

Vaughan二次电子发射模型的深入研究与拓展

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