[1] R. Widenhorn, A. Weber, M. M. Blouke et al.. PSF measurements on backilluminated CCDs［J］. SPIE, 2003, 5017: 176~184

[2] 郭亚嫘，付小峰，邹化民. MSC794型CCD相机点扩展函数及噪声响应特性的测量［J］. 暨南大学学报(自然科学版),2006, 27(5): 693~698

    Guo Yalei, Fu Xiaofeng, Zou Huamin. Measurements of ooint spread function and noise response characteristics of MSC794type CCD cameras［J］. J. Jinan University(Natural Science), 2006, 27(5): 693~698

[3] J. P. Lavine, W. Chang, C. N. Anagnostopoulos et al.. Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices［J］. Transactions on Electron Devices, 1985, 32(10): 2087~2091

[4] 蒋敏,胡炳全,马庆力 等. 中子针孔成像点扩展函数模拟研究［J］. 光子学报, 2008, 37(2): 310~313

    Jiang Min, Hu Bingquan, Ma Qingli et al.. Study on point spread function of neutron pinhole imaging system simulation［J］. Acta Photonica Sinica, 2008, 37(2): 310~313

[5] 马庆力,唐世彪,胡炳全 等. 高能中子针孔成像系统的点扩展函数的模拟研究［J］. 核技术, 2008, 31(1): 23~26

    Ma Qingli, Tang Shibiao, Hu Bingquan et al.. Simulation on point spread function of a pinhole imaging system for 6 MeV neutrons［J］. Nuclear Techniques, 2008, 31(1): 23~26

[6] C. Moglestue. Monte Carlo particle modeling of small semiconductor devices［J］. Camp. Meth. Appl. Mech. Engng., 1982, 30: 173~208

[7] P. J. Price. Monte Carlo calculation of electron transport in solids［J］. Semicond. Semimer., 1979, 14: 249~308

[8] C. N. Anagnostopoulos, E. T. Nelson, J. P. Lavine et al.. Latchup and image crosstalk suppression by internal gettering［J］. IEEE Trans. Electron Devices, 1984, 33: 225~231

[9] J. D. Jackson. Classical Electrodynamics［M］. 2nded. John Willey & Sons, New York, 1975, 133

[10] J. B. Anderson. A randomwalk simulation of the Schrodinger equation: H+3［J］. J. Chem. Phys., 1975, 63: 1499~1503

[11] J. B. Anderson. Quantum chemistry by random walk: Higher accuracy［J］. J. Chem. Phys., 1980, 73: 3897~3899

[12] K. Dawson, C. Bebek, J. Emes et al.. Radiation tolerance of fullydepleted Pchannel CCDs designed for the SNAP satellite［J］. IEEE Transactions on Nuclear Science, 2008, 55(3): 1725~1735

[13] http://www.ccd.com/ccd102.html

[14] 曾雄文,陆启生,赵伊君 等. CCD 的光电特性研究［J］. 强激光与粒子束, 1999, 11(1): 47~51

    Zeng Xiongwen, Lu Qisheng, Zhao Yijun et al.. The photoelectric characteristic research of CCD［J］. High Power Laser and Particle Beams, 1999, 11(1): 47~51

[15] T. S. Moss. Optical Properties of Semiconductors［M］. London: Butterworth, 1959, 145

[16] J. P. Lavine, E. A. Trabka, B. C. Burkey et al.. Steadystate photocarrier collection in silicon imaging devices［J］. IEEE Trans. Electron Devices, 1983, 30: 1123~1134

[17] 丁晓华,李由,于起峰 等. CCD噪声标定及其在边缘定位中的应用［J］. 光学学报, 2008, 28(1): 99~104

    Ding Xiaohua, Li You, Yu Qifeng et a.. CCD noise calibration and its application in edge location［J］. Acta Optica Sinica, 2008, 28(1): 99~104

[18] 何伟基,陈钱,屈惠明 等. 电子倍增CCD的电荷倍增特性研究［J］. 光学学报, 2008, 28(6): 1161~1166

    He Weiji, Chen Qian, Qu Huiming et al.. Charge multiplication of CCD based on electrons multiplication［J］. Acta Optica Sinica, 2008, 28(6): 1161~1166

[19] 康娟,冯爱明,徐时清 等. 相机用超高动态CCD特性分析及应用［J］. 光学学报, 2008, 28(s2): 262~265

    Kang Juan, Feng Aiming, Xu Shiqing et al.. Analysis and application of ultrahigh dynamic CCD characters for camera［J］. Acta Optica Sinica, 2008, 28(s2): 262~265

[20] D. E. Groom, P. H. Eberhard, S. E. Holland et al.. Pointspread function in depleted and partially depleted CCDs［R］. Proc.4th ESO Workshop on Optical Detectors for Astronomy, 1999, 205~216