充氧口位置对电子束蒸发沉积HfO2薄膜性质的影响
郑如玺, 易葵, 范正修, 邵建达, 涂飞飞. 充氧口位置对电子束蒸发沉积HfO2薄膜性质的影响[J]. 中国激光, 2016, 43(10): 1003001.
Zheng Ruxi, Yi Kui, Fan Zhengxiu, Shao Jianda, Tu Feifei. Influence of Oxygenating Port Position on Properties of HfO2 Films Deposited by Electron Beam Evaporation[J]. Chinese Journal of Lasers, 2016, 43(10): 1003001.
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郑如玺, 易葵, 范正修, 邵建达, 涂飞飞. 充氧口位置对电子束蒸发沉积HfO2薄膜性质的影响[J]. 中国激光, 2016, 43(10): 1003001. Zheng Ruxi, Yi Kui, Fan Zhengxiu, Shao Jianda, Tu Feifei. Influence of Oxygenating Port Position on Properties of HfO2 Films Deposited by Electron Beam Evaporation[J]. Chinese Journal of Lasers, 2016, 43(10): 1003001.