p-GaAs同质结太赫兹探测器的优化与性能

钱飞; 王天盟; 张月蘅; 沈文忠

doi:doi:10.3724/sp.j.1010.2015.00029

红外与毫米波学报, 2015, 34 (1): 29, 网络出版: 2015-03-23

p-GaAs同质结太赫兹探测器的优化与性能

Optimization and performance of p-GaAs homojunction THz detectors

论文大纲

钱飞 ^*王天盟张月蘅沈文忠

作者单位

上海交通大学物理与天文系人工结构及量子调控教育部重点实验室, 上海 200240

p-GaAs同质结太赫兹探测器谐振器增强量子效率探测率 p-GaAs homojunction THz detectors resonant cavity enhance quantum efficiency detectivity

摘要

从提高p-GaAs同质结太赫兹探测器量子效率出发, 在考虑温度和偏压等参数的影响后, 优化了谐振腔增强的p-GaAs同质结太赫兹探测器的材料及结构参数, 使探测器的量子效率提高到了17%.并计算了探测器的响应率、探测率和偏压、温度、光谱频率的关系, 得到了最佳工作偏压(10~40mV)、最佳工作温度(<8K)和最大探测率(4.1×1010cm Hz1/2/W).而通过施加一对匹配的反射镜来构造谐振腔的设计, 所能获得的极限量子效率为26%, 极限探测率和响应率分别为5.7×1010cm Hz1/2/W、25.9A/W.

Abstract

In order to improve the quantum efficiency of THz detectors made of p-GaAs homojunction, the effects of temperature and bias voltage were taken into account. By optimizing the materials and structure parameters of the resonant cavity enhanced p-GaAs HIWIP detectors, its quantum efficiency was increased to 17%. The relationships among the responsivity and detectivity of the detector, bias voltage, temperature and spectral frequency were simulated, leading to an optimized bias voltage range(10~40mV), an optimal temperature(< 8K) and a maximum detectivity(4.1×1010cm Hz1/2/W). By applying a pair of matched mirror, the ultimate quantum efficiency, the detectivity and the responsivity are 26%, 5.7×1010cm Hz1/2/W and 25.9 A/W, respectively.

参考文献

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钱飞, 王天盟, 张月蘅, 沈文忠. p-GaAs同质结太赫兹探测器的优化与性能[J]. 红外与毫米波学报, 2015, 34(1): 29. QIAN Fei, WANG Tian-Meng, ZHANG Yue-Heng, SHEN Wen-Zhong. Optimization and performance of p-GaAs homojunction THz detectors[J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 29.

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