中国激光, 2018, 45 (10): 1002002, 网络出版: 2018-10-12
多晶硅表面皮秒激光阵列孔绒面制备 下载: 890次
Fabrication of Array Pores on Polysilicon Surface by Picosecond Laser
图 & 表
图 2. 波长为700 nm的入射光在微孔中的电场分布
Fig. 2. Electric field distribution of incident light with wavelength of 700 nm within micro-pores
图 4. 各工艺参数对多晶硅表面凹坑刻蚀深度的影响。(a)激光功率;(b)脉冲频率;(c)扫描速度;(d)扫描次数
Fig. 4. Effects of each process parameter on pit etching depth on polysilicon surface. (a) Laser power; (b) pulse frequency; (c) scanning speed; (d) number of scannings
图 5. 不同孔距下的激光刻蚀多晶硅样品。(a1)(b1)(c1)(d1)显微形貌;(a2)(b2)(c2)(d2)相应的截面曲线
Fig. 5. Laser-etched polysilicon samples at different pore pitches. (a1)(b1)(c1)(d1) Micro-morphologies; (a2)(b2)(c2)(d2) corresponding curves of cross sections
图 6. 孔距d=20 μm时激光刻蚀多晶硅样品的三维形貌
Fig. 6. 3D topography of laser-etched polysilicon sample at pore pitch d=20 μm
图 7. 不同工艺制绒的多晶硅样品的反射率
Fig. 7. Reflectivity of textured polysilicon samples under different surface textures
图 8. 激光刻蚀与化学腐蚀样品的LSCM图。(a)激光刻蚀,d=30 μm;(b)激光刻蚀样品单孔的剖视图,d=30 μm;(c)化学腐蚀
Fig. 8. LSCM images of laser etched and chemically etched samples. (a) Laser etching, d=30 μm; (b) cut-open view for single pore of laser etched sample, d=30 μm; (c) chemical etching
表 1仿真结果
Table1. Simulation results
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贾天代, 冯爱新, 陈欢, 刘勇. 多晶硅表面皮秒激光阵列孔绒面制备[J]. 中国激光, 2018, 45(10): 1002002. Jia Tiandai, Feng Aixin, Chen Huan, Liu Yong. Fabrication of Array Pores on Polysilicon Surface by Picosecond Laser[J]. Chinese Journal of Lasers, 2018, 45(10): 1002002.