[1] 李进玺，程引会，周辉，等.屏蔽电缆对脉冲X射线响应的数值计算［J］.强激光与粒子束， 2006, 18(6): 981-984.(Li Jinxi, Cheng Yinhui, Zhou Hui, et al. Response of shielding cable to pulsed X-rays. High Power Laser and Particle Beams, 2006, 18(6): 981-984)

[2] 程引会，周辉，乔登江，等.带阻性负载细同轴电缆对电磁脉冲响应的有限差分算法［J］.强激光与粒子束， 2005, 17(2): 237-240.(Cheng Yinhui, Zhou Hui, Qiao Dengjiang, et al. FDTD algorithm for EMP response calculation on thin wire with resistance load. High Power Laser and Particle Beams, 2005, 17(2): 237-240)

[3] 李进玺，程引会，周辉，等.用传输线和时域有限差分法计算电缆X射线响应［J］.强激光与粒子束， 2007, 19(12): 2079-2082.(Li Jinxi, Cheng Yinhui, Zhou Hui, et al. Calculation of coaxial line X-ray responses by transmission line method and finite difference time domain method. High Power Laser and Particle Beams, 2007, 19(12): 2079-2082)

[4] Higgins D F, Barbara S. Time-domain calculation of the leakage of SGEMP transients through braided cable shields［J］. IEEE Trans on Nuclear Science, 1989, 36(6): 2042-2049.

[5] Higgins D F, Barbara S. SGEMP leakage through satellite cable shields: the importance of transfer admittance coupling and its implications on testing［J］. IEEE Trans on Nucl, 1980, 27(6): 1589-1595.

[6] 赵墨，程引会，吴伟,等.二极管负载电缆X射线辐照瞬态响应数值模拟［J］.强激光与粒子束， 2013, 25(2): 490-495.(Zhao Mo, Cheng Yinhui, Wu Wei, et al. Numerical simulation for calculating transient response of coaxial line with diode to pulsed X-ray. High Power Laser and Particle Beams, 2013, 25(2): 490-495)

[7] Arnborg T. Two-dimensional avalanche simulation of collector-emitter breakdown［J］. IEEE Trans on Electron Devices, 1990, 37(9): 2099-2101.

[8] Connell R M, Shiue T, Hoft R G, et al. Numerical simulation of avalanche breakdown in PIN diodes and bipolar transistors［J］. Industry Applications Society Annual Meeting, 1992: 1061-1065.

[9] Dobykin V D. Development of the theory for thermal damage of semiconductor structures by high-power electromagnetic radiation［J］. Journal of Communications Technology and Electronics, 2008, 53(1): 100-103.

[10] Dobykin V D, Kharchenko V V. Electromagnetic-pulse functional damage of semiconductor devices modeled using temperature gradients as boundary conditions［J］. Journal of Communications Technology and Electronics, 2006, 51(2): 231-239.

[11] 周怀安，杜正伟，龚克.双极型晶体管在强电磁脉冲作用下的瞬态响应［J］.强激光与粒子束， 2005, 17(12): 1861-1864.(Zhou Huaian, Du Zhengwei, Gong Ke. Transient response of bipolar junction transistor under intense electromagnetic pulse. High Power Laser and Particle Beams, 2005, 17(12): 1861-1864)

[12] 周怀安，杜正伟，龚克.双极型晶体管损坏与强电磁脉冲注入位置的关系［J］.强激光与粒子束， 2006, 18(4): 689-691.(Zhou Huaian, Du Zhengwei, Gong Ke. Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode. High Power Laser and Particle Beams, 2006, 18(4): 689-691)

[13] 陈曦，杜正伟，龚克.外电路在电磁脉冲对双极型晶体管作用过程中的影响［J］.强激光与粒子束， 2007, 19(7): 1197-1202.(Chen Xi, Du Zhengwei, Gong Ke. Influence of circuit during injection of EMP into bipolar junction transistor. High Power Laser and Particle Beams, 2007, 19(7): 1197-1202)

[14] Gummel H K. A self-consistent iterative scheme for one-dimensional steady state transistor calculations［J］. IEEE Trans on Electron Devices, 1964: 455-465.

[15] Gaur S P, Lowe G, Thorpe W. Power transistor crystal damage in inductive load switching［C］//A Reliability Concern Annual Proceedings-Reliability Physics. 1977: 227-231.

[16] 李平，方进勇，刘国治，等.电子系统HPM脉宽效应探讨［J］.试验与研究， 2000, 23(1): 70-77.(Li Ping, Fang Jinyong, Liu Guozhi, et al. The preliminary study of HPM pulse-width effect on electronic system. Experiment and Study, 2000, 23(1): 70-77)