InGaAs近红外相机电路设计与实现

金亮

光学与光电技术, 2013, 11 (4): 37, 网络出版: 2013-10-29

InGaAs近红外相机电路设计与实现

Design and Implementation of Circuit for InGaAs Near-Infrared Camera

论文大纲

金亮 ^*

作者单位

海军装备部电子部, 北京 100084

近红外图像处理时序驱动硬件设计 near-infrared image processing time sequence driving hardware design

摘要

随着国外0.9~1.7 μm InGaAs近红外相机的迅速发展,目前已被大量应用于工业和**领域。探讨了InGaAs近红外相机在不同领域的应用,分析了InGaAs材料的优势及探测器选型。结合相应的探测器阵列,从相机偏置电压产生、时序驱动设计与制冷控制等方面给出了InGaAs近红外相机的硬件电路设计方案,解决了研制过程中的部分重难点,并针对后期图像处理进行了仿真验证,达到应用要求。

Abstract

0.9~1.7 μm InGaAs near-infrared cameras have quickly developed, and are widely used in industry and military field in foreign countries. In this paper, the applications of InGaAs near-infrared camera in various fields are presented and advantages of InGaAs material are analyzed. Based on corresponding detector array, the design and implementation of circuit for InGaAs near-infrared camera is put forward, including bias voltage produce, timing-driven design, cooling control and hardware architecture. Simulation verification is introduced in view of the image post-processing.

参考文献

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金亮. InGaAs近红外相机电路设计与实现[J]. 光学与光电技术, 2013, 11(4): 37. JIN Liang. Design and Implementation of Circuit for InGaAs Near-Infrared Camera[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2013, 11(4): 37.

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