替代衬底上的碲镉汞长波器件暗电流机理
赵真典, 陈路, 傅祥良, 王伟强, 沈川, 张彬, 卜顺栋, 王高, 杨凤, 何力. 替代衬底上的碲镉汞长波器件暗电流机理[J]. 红外与毫米波学报, 2017, 36(2): 186.
ZHAO Zhen-Dian, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, SHEN Chuan, ZHANG Bin, BU Shun-Dong, WANG Gao, YANG Feng, HE Li. Dark current mechanism in long-wavelength HgCdTe infrared detectors on alternative substrates[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 186.
[1] He L, Chen L, Wu Y, et al. MBE HgCdTe on Si and GaAs substrates[J]. Journal of Crystal Growth, 2007, 301: 268-272.
[2] Carmody M, Pasko J G, Edwall D, et al. Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance[J]. Journal of electronic materials, 2005, 34(6): 832-838.
[3] Bornfreund R, Rosbeck J P, Thai Y N, et al. High-performance LWIR MBE-grown HgCdTe/Si focal plane arrays[J]. Journal of Electronic Materials, 2007, 36(8): 1085-1091.
[4] Johnson S M, Buell A A, Vilela M F, et al. HgCdTe/Si materials for long wavelength infrared detectors[J]. Journal of electronic materials, 2004, 33(6): 526-530.
[5] Carmody M, Pasko J G, Edwall D, et al. Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance[J]. Journal of electronic materials, 2004, 33(6): 531-537.
[6] Carmody M, Pasko J G, Edwall D, et al. Status of LWIR HgCdTe-on-silicon FPA technology[J]. Journal of Electronic Materials, 2008, 37(9): 1184-1188.
[7] Hess G T, Sanders T J. HgCdTe double-layer heterojunction[J]. SPIE, 2000, 4028:353-364.
[8] Wenus J, Rutkowski J, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes[J]. SPIE, 2001, 4288: 335-344.
[9] Arias J M, Pasko J G, Zandian M, et al. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes[J]. Journal of electronic materials, 1993, 22(8): 1049-1053.
[10] Hu W D, Chen X S, Yin F, et al. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors [J]. J. Appl. Phys., 2009, 105:104502.
[11] Nguyen T, Musca C A, Dell J M, et al. Dark currents in long wavelength infrared HgCdTe gated photodiodes[J]. Journal of Electronic Materials. 2004, 33(6):621-629.
[12] Ajisawa A, Oda N. Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing[J]. Journal of Elettronic Materials, 1995, 24(9):1105-1111.
[13] Blanks D K, Beck J D, Kinch M A, et al. Band-to-band tunnel processes in HgCdTe:Comparison of experimental and theoretical studies[J].Journal of Vacuum Science & Technology A: Vacuum,Surfaces and Films, 1988, 6(4):2790-2794.
赵真典, 陈路, 傅祥良, 王伟强, 沈川, 张彬, 卜顺栋, 王高, 杨凤, 何力. 替代衬底上的碲镉汞长波器件暗电流机理[J]. 红外与毫米波学报, 2017, 36(2): 186. ZHAO Zhen-Dian, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, SHEN Chuan, ZHANG Bin, BU Shun-Dong, WANG Gao, YANG Feng, HE Li. Dark current mechanism in long-wavelength HgCdTe infrared detectors on alternative substrates[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 186.
PDF全文
