采用空心阴极等离子化学气相沉积方法,以NH₃/H₂的混合气体及CH₄气体为原料反应气体,成功地制备了非晶的CHN薄膜,研究了CHN薄膜的沉积速率与直流电压及反应气体流量的关系.同时用X射线光电子能谱(XPS)确定了不同条件下薄膜中N原子的百分比,用原子力显微镜(AFM)对薄膜的表面粗糙度及表面形貌进行了测量和表征.结果表明:薄膜中N原子的百分比最大为12%,薄膜的表面结构光滑、致密,表面粗糙度小于1 nm.

A group of amorphous CHN films were fabricated successfully by hollow cathode plasma chemical vapor deposition with ammonia,hydrogen and methane as reacting gas.The variation of deposition rate as a function of DC voltage and reactive gas flows were studied,respectively.The nitrogen content in terms of atomic percentage under different conditions was identified by X-ray photoelectron spectra(XPS).The surface roughness and surface morphology were measured and presented by atomic force microscope(AFM). The results show that the actual nitrogen content in the films can be as much as 12%,the surface morphology is smooth and dense and the surface roughness is lower than 1 nm.