中国激光, 2011, 38 (4): 0407002, 网络出版: 2011-03-31   

退火氧压对Zn0.99Fe0.01O薄膜的结晶质量及其激光感生电压效应的影响

Influence of Annealing Oxygen Pressure on Crystallization Quality of Zn0.99Fe0.01O Thin Film and Laser-Induced Voltages Effect
作者单位
昆明理工大学光电子新材料研究所, 云南 昆明 650051
摘要
采用脉冲激光沉积法(PLD)在Al2O3衬底上成功制备了Zn0.99Fe0.01O薄膜,研究了退火氧压对Zn0.99Fe0.01O薄膜的晶体结构及其激光感生电压(LIV)效应的影响。X射线衍射仪分析结果表明,Zn0.99Fe0.01O具有六角纤锌矿结构,并且是沿[001]取向近外延生长。同时随着退火氧压的增大,薄膜的晶粒尺寸先增大后减小,退火氧压为2000 Pa时薄膜晶粒尺寸最大,结晶质量最好。另外在10°倾斜的Al2O3单晶衬底上制备的Zn0.99Fe0.01O薄膜在3000 Pa的退火氧压下可以观察到最大的LIV信号,达到79.5 mV。
Abstract
Zn0.99Fe0.01O thin films on Al2O3 substrates are successfully prepared by using pulsed laser deposition(PLD) technique.And the influence of annealing oxygen pressure on the crystal structure and laser-induced voltage (LIV) effect of Zn0.99Fe0.01O thin films is studied. X-ray diffraction (XRD) analysis shows that Zn0.99Fe0.01O thin films are hexagonal wurtzite structure and [001] orientation. Meanwhile, with annealing oxygen pressure increasing, the grain size D of Zn1-xFexO thin films first increases and then decreases. At annealing oxygen pressure of 2000 Pa, the grain size D of Zn1-xFexO thin films achieves maximum, and crystallization quality is the best. In addition, at annealing oxygen pressure of 3000 Pa, the largest LIV signal of 79.5 mV is measured in Zn0.99Fe0.01O films grown on 10° vicinal-cut Al2O3 single crystal substrates.
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龚玉, 张辉, 张鹏翔. 退火氧压对Zn0.99Fe0.01O薄膜的结晶质量及其激光感生电压效应的影响[J]. 中国激光, 2011, 38(4): 0407002. Gong Yu, Zhang Hui, Zhang Pengxiang. Influence of Annealing Oxygen Pressure on Crystallization Quality of Zn0.99Fe0.01O Thin Film and Laser-Induced Voltages Effect[J]. Chinese Journal of Lasers, 2011, 38(4): 0407002.

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