微小尺寸立方氮化硼晶体蓝紫光发射光谱的测量与分析

对于微小尺寸的N型宽禁带立方氮化硼(CBN)半导体晶体, 在施加恒稳电场的情况下, 观察到电致发光现象。通过置CBN单晶样品于光栅单色仪抛物面反射镜焦点的方法, 对于CBN的蓝紫光辐射获得了测试系统的最大入射光通量和理想的信噪比。在350～450 nm波长范围内, CBN加上4.7×106 V?cm-1恒稳电场条件下, 测量出立方氮化硼的蓝紫光发射光谱。同时, 结合基于第一性原理的GGA方法计算出的立方氮化硼能带结构和电子态密度, 以及测量得到的非线性j-E关系和电击穿特性, 讨论了发光机理。提出了在雪崩击穿前的缺陷偶极子极化和击穿后, 产生大量的激发态电子, 电子在Γ能谷和X能谷间迁移的发光机制。Cubic Boron Nitride Crystal

Abstract

The electroluminescence effect can be observed by the micro N-typewide-gap CBN semiconductor crystal under the condition of static eletric field.The micro N-type CBN crystal was fixed on the focus of the parabolic reflector ofgrating monochromator, and the maximum value of transmission ratio and the idealsignal-noise ratio can be obtained. Under the condition of static ectric-fieldintensity (4.7×106 V?cm-1), the blue-violet light-emitting spectrum of the CBNcrystal was measured in the range from 350 to 450 nm. The construction of the CBNenergy band, which was calculated with the First-principles method, the nonlinearrelationship between current density and the ectric-field intensity that wasmeasured and the phenomenon of electrical break-down were considered together toenable us to discuss the luminescence mechanism. Finally, the authors came upwith the luminescence mechanism concerning electron migration from Γ energyvalley to X energy valley. The large number of excited electrons we talked aboutwere generated by polarization and breakdown of defect dipole before avalanchebreakdown occurred.valey; Generalized gradient approximation(GGA)

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刘海波, 贾刚, 徐仲晖, 孟庆巨, 孙晓冰. 微小尺寸立方氮化硼晶体蓝紫光发射光谱的测量与分析[J]. 光谱学与光谱分析, 2010, 30(3): 595. LIU Hai-bo, JIA Gang, XU Zhong-hui, MENG Qing-ju, SUN Xiao-bing. Measurement and Analysis of Blue-Violet Light Emitting Spectrum on Tiny[J]. Spectroscopy and Spectral Analysis, 2010, 30(3): 595.

微小尺寸立方氮化硼晶体蓝紫光发射光谱的测量与分析

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