为探究Al液滴在GaAs表面的熟化行为，利用液滴外延法在GaAs衬底表面制备Al液滴。在零As压环境下，通过控制退火时间有效控制Al液滴的生长、成核。结合热力学原理和晶体生长理论对样品形貌变化现象进行物理解释，构建出液滴形貌变化过程中熟化、刻蚀和扩散行为的基本模型。理论计算表明，液滴在熟化行为达到退火239 s的平衡点后，被向下刻蚀和向外扩散两个行为同时消耗。

To investigate the ripening behavior of Al droplets on GaAs surface, Al droplets were prepared onto GaAs substrates by droplet epitaxy. The growth and nucleation of Al droplets were effectively controlled by controlling the annealing time without arsenic pressure. By combining thermodynamic principles and crystal growth theories, physical explanation of the different sample morphology and constructed the basic models about ripening, etching and diffusion behaviors during the process of droplets morphology transition were carried out. The calculation results confirm that the droplet will be consumed by etching and diffusion process simultaneously when the ripening behavior reaches the equilibrium state after annealing of 239 s.