中国激光, 1991, 18 (8): 561, 网络出版: 2007-11-12
增益导引GaAlAs/GaAs锁相列阵激光器
A gain-guided GaAlAs/GaAs phase-locked laser array
摘要
本文报道采用氧化物掩蔽Zn扩散平面条形结构的增益导引GaAlAs/GaAs锁相列阵激光器的工艺和特性。获得了阈值电流小于200mA,输出功率大于240mW的实验结果。远场测试表明其具有良好的锁相特性。
Abstract
A gain-guided GaAlAs/GaAs phase-locked laser array is described, which consists of multi-stripes made by Zn diffusion with oxide mask. A typical threshold current of less than 200mA and an output power of more than 240mW were obt ained, and the phase-locking is shown in the far field patterns.
屠玉珍, 金志良, 顾德英, 封伟忠, 林岳明, 刘斌, 方祖捷. 增益导引GaAlAs/GaAs锁相列阵激光器[J]. 中国激光, 1991, 18(8): 561. 屠玉珍, 金志良, 顾德英, 封伟忠, 林岳明, 刘斌, 方祖捷. A gain-guided GaAlAs/GaAs phase-locked laser array[J]. Chinese Journal of Lasers, 1991, 18(8): 561.
PDF全文
