Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong; Brianna A. Klein; Andrew A. Allerman; Albert G. Baca; Mary H. Crawford; Jacob Podkaminer; Carlos R. Perez; Michael P. Siegal; Erica A. Douglas; Vincent M. Abate; Francois Leonard

doi:doi:10.1364/PRJ.7.000B24

Photonics Research, 2019, 7 (6): 06000B24, Published Online: May. 17, 2019

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 579次

Author Affiliations

¹ Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

² Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³ Sandia National Laboratories, Livermore, California 94550, USA

Basic Information

DOI:	10.1364/PRJ.7.000B24
中图分类号:	--
栏目:	SEMICONDUCTOR UV PHOTONICS
项目基金:	Sandia National Laboratories10.13039/100006234、 Defense Advanced Research Projects Agency (DARPA)10.13039/100000185、 National Technology and Engineering Solutions of Sandia、 U.S. Department of Energy’s National Nuclear Security Administration、
收稿日期:	Jan. 28, 2019
修改稿日期:	--
网络出版日期:	May. 17, 2019
通讯作者:	Andrew M. Armstrong (aarmstr@sandia.gov)
备注:	--

Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): 06000B24.

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 579次

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