Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong; Brianna A. Klein; Andrew A. Allerman; Albert G. Baca; Mary H. Crawford; Jacob Podkaminer; Carlos R. Perez; Michael P. Siegal; Erica A. Douglas; Vincent M. Abate; Francois Leonard

doi:doi:10.1364/PRJ.7.000B24

Photonics Research, 2019, 7 (6): 06000B24, Published Online: May. 17, 2019

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 581次

Author Affiliations

¹ Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

² Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³ Sandia National Laboratories, Livermore, California 94550, USA

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Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): 06000B24.

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