Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong; Brianna A. Klein; Andrew A. Allerman; Albert G. Baca; Mary H. Crawford; Jacob Podkaminer; Carlos R. Perez; Michael P. Siegal; Erica A. Douglas; Vincent M. Abate; Francois Leonard

doi:doi:10.1364/PRJ.7.000B24

Photonics Research, 2019, 7 (6): 06000B24, Published Online: May. 17, 2019

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 581次

Author Affiliations

¹ Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

² Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³ Sandia National Laboratories, Livermore, California 94550, USA

Figures & Tables

Fig. 1. (a) Device A heterostructure and energy band diagram in the pinch-off condition (b) at the onset of illumination and (c) under steady-state illumination. (d) Device B heterostructure and energy band diagram in the pinch-off condition (e) at the onset of illumination and (f) under steady-state illumination. (g) Device C heterostructure and energy band diagram in the pinch-off condition (h) at the onset of illumination and (i) under steady-state illumination.

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Fig. 2. AFM image of GaN nanodots after size reduction and prior to AlGaN barrier overgrowth. The image size is 2 μm×2 μm.

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Fig. 3. IDS−VDS data for Device A showing good transistor action with inclusion of GaN nanodots.

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Fig. 4. Transfer characteristics for Device A in the dark and under UV illumination. The device shows good pinch-off in the dark and switches to an on-state under UV illumination.

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Fig. 5. Transient response under 4.70 eV illumination and use of an electrical fill pulse to rapidly reset the detector.

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Fig. 6. Responsivity spectrum for a 40 ms rise time for Device A at different optical intensities. Inset shows the same data on a linear scale.

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Fig. 7. Transfer characteristics for Device B in the dark and under UV illumination. Despite the incomplete pinch-off, the device exhibited large ΔIDS.

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Fig. 8. Responsivity spectrum for a 40 ms rise time for Device B.

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Fig. 9. Responsivity and bandwidth under 4.35 eV illumination for Device B under different optical intensities.

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Fig. 10. Transfer characteristics for Device C in the dark and under UV illumination.

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Fig. 11. Responsivity for Device C for a 40 ms rise time.

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Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate[J]. Photonics Research, 2019, 7(6): 06000B24.

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 581次

Fig. 2. AFM image of GaN nanodots after size reduction and prior to AlGaN barrier overgrowth. The image size is 2 μm×2 μm.

Fig. 3. IDS−VDS data for Device A showing good transistor action with inclusion of GaN nanodots.

Fig. 4. Transfer characteristics for Device A in the dark and under UV illumination. The device shows good pinch-off in the dark and switches to an on-state under UV illumination.

Fig. 5. Transient response under 4.70 eV illumination and use of an electrical fill pulse to rapidly reset the detector.

Fig. 6. Responsivity spectrum for a 40 ms rise time for Device A at different optical intensities. Inset shows the same data on a linear scale.

Fig. 7. Transfer characteristics for Device B in the dark and under UV illumination. Despite the incomplete pinch-off, the device exhibited large ΔIDS.

Fig. 8. Responsivity spectrum for a 40 ms rise time for Device B.

Fig. 9. Responsivity and bandwidth under 4.35 eV illumination for Device B under different optical intensities.

Fig. 10. Transfer characteristics for Device C in the dark and under UV illumination.

Fig. 11. Responsivity for Device C for a 40 ms rise time.

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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate Download： 581次

Fig. 2. AFM image of GaN nanodots after size reduction and prior to AlGaN barrier overgrowth. The image size is 2 μm×2 μm.

Fig. 3. IDS−VDS data for Device A showing good transistor action with inclusion of GaN nanodots.

Fig. 4. Transfer characteristics for Device A in the dark and under UV illumination. The device shows good pinch-off in the dark and switches to an on-state under UV illumination.

Fig. 5. Transient response under 4.70 eV illumination and use of an electrical fill pulse to rapidly reset the detector.

Fig. 6. Responsivity spectrum for a 40 ms rise time for Device A at different optical intensities. Inset shows the same data on a linear scale.

Fig. 7. Transfer characteristics for Device B in the dark and under UV illumination. Despite the incomplete pinch-off, the device exhibited large ΔIDS.

Fig. 8. Responsivity spectrum for a 40 ms rise time for Device B.

Fig. 9. Responsivity and bandwidth under 4.35 eV illumination for Device B under different optical intensities.

Fig. 10. Transfer characteristics for Device C in the dark and under UV illumination.

Fig. 11. Responsivity for Device C for a 40 ms rise time.

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