[1] Lee H N, Hesse D, Zakharov N, et al. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates [J]. Science, 2002, 296(5575): 2006-2009.

[2] Zhang S, Zhang J Z, Han M J, et al. Temperature dependent near infrared ultraviolet range dielectric functions of nanocrystalline (Na0.5Bi0.5)1-xCex(Ti0.99Fe0.01)O3 films [J]. Applied Physics Letters, 2014, 104(4): 041106.

[3] Zhang J Z. Synthesis and optical properties of low diamention Bi-based oxide materials [D]. Shanghai: East China Normal University (张金中 铋基低维结构氧化物的合成及其光学和电学特性研究. 上海: 华东师范大学博士论文) 2013.

[4] Li C L, Wang B, Wang R, et al. First-principles study of structural, elastic, electronic, and optical properties of orthorhombic BiGaO3 [J]. Computational Materials Science, 2008, 42(4): 614-618.

[5] Baettig P, Schelle C F, Lesar R, et al. Theoretical prediction of new high-performance lead-free piezoelectrics [J]. Chemistry of Materials, 2005, 17(6): 1376-1380.

[6] Wang H, Wang B, Li Q, et al. First-principles study of the cubic perovskites BiMO3 (M=Al, Ga, In, and Sc) [J]. Physical Review B, 2007, 75(24): 245209.

[7] Belik A A, Wuernisha T, Kamiyama T, et al. High-pressure synthesis, crystal structures, and properties of perovskite-like BiAlO3 and pyroxene-like BiGaO3[J]. Chemistry of Materials, 2006, 18(1): 133-139.

[8] Yusa H, Belik A A, Takayama-Muromachi E, et al. High-pressure phase transitions in BiMO3 ( M=Al , Ga, and In): in situ X-ray diffraction and Raman scattering experiments [J]. Physical Review B, 2009, 80(21): 214103.

[9] Yan J, Gomi M, Yokota T, et al. Phase transition and huge ferroelectric polarization observed in BiFe1-xGaxO3 thin films [J]. Applied Physics Letters, 2013, 102(22): 222906.

[10] Zhang J Z, Ding H C, Zhu J J, et al. Electronic structure and optical responses of nanocrystalline BiGaO3 films: A combination study of experiment and theory [J]. Journal of Applied Physics, 2014, 115(8): 083110.

[11] Azzam R M A, Bashara N M. Ellipsometry and polarized light [M]. Amsterdam: Elsevier, 1977, 181.

[12] Hu Z G, Wang S W, Hhang Z M, et al. Infrared optical properties of Bi2Ti2O7 thin films prepared by chemical solution decomposition technique [J]. Journal of Infrared and Millimeter Waves(胡志高, 王少伟, 黄志明等.化学溶液分解法制备的Bi2Ti2O7薄膜的红外光学性质研究. 红外与毫米波学报), 2004, 23(1): 47-50.

[13] LI Wen-Wa, LI Ya-Wei, HU Zhi-Gao, et al. Study on the spectroscopic ellipsometry of La0.5Sr0.5CoO3 films prepared at different substrate temperatures [J]. Journal of Infrared and Millimeter Waves(李文武, 李亚巍, 胡志高等.不同衬底温度生长的La0.5Sr0.5CoO3薄膜椭圆偏振光谱研究. 红外与毫米波学报), 2009, 28(6): 410-143.

[14] Adachi S. Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb [J]. Physical Review B, 1987, 35(14): 7454.

[15] Gao Y Q, Huang Z M, Hou Y, et al. Optical properties of Mn1.56Co0.96Ni0.48O4 films studied by spectroscopic ellipsometry [J]. Applied Physics Letters, 2009, 94(1): 011106-011103.

[16] Zhang J Z, Chen X G, Jiang K, et al. Evolution of orientation degree, lattice dynamics and electronic band structure properties in nanocrystalline lanthanum-doped bismuth titanate ferroelectric films by chemical solution deposition [J]. Dalton Transactions, 2011, 40(31): 7967-7975.