无掩模Si圆柱纳米图形衬底上GaAs的异变外延生长

李玉斌; 王俊; 王琦; 邓灿; 王一帆; 任晓敏

半导体光电, 2014, 35 (4): 625, 网络出版: 2014-09-01

无掩模Si圆柱纳米图形衬底上GaAs的异变外延生长

Heteroepitaxial Growth of GaAs on Maskless Roundpillar Nanopatterned Si Substrate

论文大纲

李玉斌 ^*王俊王琦邓灿王一帆任晓敏

作者单位

北京邮电大学信息光子学与光通信国家重点实验室, 北京 100876

纳米图形衬底 nano patterned substrate MOCVD MOCVD GaAs GaAs Si Si

摘要

采用金属有机化学气相沉积方法在无掩模的直径为400nm的圆柱Si(100)图形衬底上外延生长了GaAs薄膜。图形衬底采用纳米压印技术及反应离子刻蚀技术制作而成。运用两步法生长工艺在此图形衬底上制备了厚度为1.8μm的GaAs外延层。GaAs的晶体质量通过腐蚀坑密度和透射电镜表征。图形衬底上的 GaAs外延层表面腐蚀坑密度约1×107cm-2, 比平面衬底上降低了两个数量级。透射电镜观测显示大部分产生于GaAs/Si异质界面的穿透位错被阻挡在圆柱顶部附近。

Abstract

GaAs films were grown by metal organic chemical vapor deposition (MOCVD) on 400nm maskless roundpillar patterned Si (100) substrate. The patterned substrate was fabricated by combining nanoimprint lithography with reactive iron etching. 1.8μmthick GaAs epilayer was obtained on the patterned substrate using twostep method. The quality of GaAs was evaluated using etching pit density and transmission electron microscopy. The etching pit density of GaAs grown on patterned Si substrate at ~1×107cm-2 was two orders of magnitude lower compared with that grown on planar Si substrate. TEM observations reveal that most of the threading dislocations originated from the GaAs/Si interface were trapped near the top of the roundpillars.

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李玉斌, 王俊, 王琦, 邓灿, 王一帆, 任晓敏. 无掩模Si圆柱纳米图形衬底上GaAs的异变外延生长[J]. 半导体光电, 2014, 35(4): 625. LI Yubin, WANG Jun, WANG Qi, DENG Can, WANG Yifan, REN Xiaomin. Heteroepitaxial Growth of GaAs on Maskless Roundpillar Nanopatterned Si Substrate[J]. Semiconductor Optoelectronics, 2014, 35(4): 625.

无掩模Si圆柱纳米图形衬底上GaAs的异变外延生长

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