半导体光电, 2015, 36 (3): 412, 网络出版: 2015-07-10
应用厚缓冲层实现蓝宝石上高质量AlN外延层的MOCVD生长
MOCVD Growth of High Quality AlN on Sapphire Substrate by Introducing Thick Buffer Layer
补充材料
李艳炯, 赵红, 赵文伯, 叶嗣荣, 杨晓波. 应用厚缓冲层实现蓝宝石上高质量AlN外延层的MOCVD生长[J]. 半导体光电, 2015, 36(3): 412. LI Yanjiong, ZHAO Hong, ZHAO Wenbo, YE Sirong, YANG Xiaobo. MOCVD Growth of High Quality AlN on Sapphire Substrate by Introducing Thick Buffer Layer[J]. Semiconductor Optoelectronics, 2015, 36(3): 412.