中国激光, 2018, 45 (6): 0606005, 网络出版: 2018-07-05
不同基片对单量子点单光子荧光发射的调控 
下载： 1082次
Modification of Single Photon Fluorescence Emission of Single Quantum Dots with Different Substrates
图 & 表
图 2. 单量子点荧光发射特性的测量。(a)石英玻片上单量子点发射荧光的强度随时间变化的曲线(采用雪崩二极管或EMCCD采集);(b)石英玻片上单量子点发射荧光的强度衰减曲线,内插图为该量子点发射荧光的二阶相关函数曲线(显示单光子发射);(c)宽场荧光成像,红色圆圈内为测试的单量子点;(d)量子点荧光光谱(荧光中心波长约为705 nm)
Fig. 2. Measurement of the fluorescence characteristics of single quantum dots. (a) Time trace of fluorescence intensity of single quantum dots on quartz glass substrate (recorded by single photon avalanche diode or EMCCD); (b) fluorescence decay curves of single quantum dots on quartz glass substrate (The inset shows the second-order correlation function that exhibits the anti-bunching signature of single photon emission for single quantum dots); (c) wide-field fluorescence imaging of quantum dots, the
图 3. 单量子点发射单光子荧光的寿命分布。(a)~(c)依次为石英玻片、硅片、金膜上单量子点的测量结果
Fig. 3. Fluorescence lifetime distributions of the single photon emission of single quantum dots. (a)-(c) show the measurement results for single quantum dots on quartz glass substrate, silicon substrate and gold film, respectively
图 4. 不同基片上量子点发射荧光的总衰减速率的计算结果和AFM成像图(成像范围5 μm×5 μm)。(a1)、(a2)水平偏振、竖直偏振点电流源到石英玻片、硅片、金膜表面不同有效距离d下荧光的总衰减速率计算结果;(b1)~(b3)石英玻片表面、硅片表面、金膜表面的AFM成像图(均无量子点);(b4)石英玻片上涂覆量子点后的AFM成像图
Fig. 4. Simulated fluorescence decay rates of quantum dots on different substrates and AFM images (with range 5 μm×5 μm). (a1)-(a2) Simulated fluorescence decay rates of an electric point source of horizontal polarization (a1) or vertical polarization (a2) at different effective distances d away from the surface of quartz glass substrate, silicon substrate and gold film; (b1)-(b3) AFM images of the surface of quartz glass substrate, silicon substrate and gold film, respectively; (b4) AFM image of quantu
图 5. 计算得到的点电流源荧光发射的量子产率与其到基片距离d的相关性。石英玻片、硅片、金膜上(a)水平偏振与(b)竖直偏振点电流源的计算结果
Fig. 5. Simulated quantum yield q of an electric point source as a function of the distance d between the electric point source and the substrates. The results are obtained for an electric point source of (a) horizontal polarization or (b) vertical polarization on quartz glass substrate, silicon substrate and gold film
图 6. 荧光强度随时间变化的曲线。(a1)~(a3)石英玻片上3处单量子点的数据;(b1)~(b3)硅片上3处单量子点的数据;(c1)~(c3)金膜上3处单量子点的数据
Fig. 6. Time trace of fluorescence intensity of single quantum dots. (a1)-(a3) Results of three single quantum dots on the quartz glass substrate; (b1)-(b3) results of three single quantum dots on the silicon substrate; (c1)-(c3) results of three single quantum dots on the gold film
图 7. 单量子点荧光强度的统计分布。(a1)~(a3)石英玻片上3处单量子点的数据;(b1)~(b3)硅片上3处单量子点的数据;(c1)~(c3)金膜上3处单量子点的数据
Fig. 7. Fluorescence intensity statistical distribution of single quantum dots. (a1)-(a3) Results of three quantum dots on the quartz glass substrate; (b1)-(b3) results of three quantum dots on the silicon substrate; (c1)-(c3) results of three quantum dots on the gold film
林雨, 钟莹, 刘海涛. 不同基片对单量子点单光子荧光发射的调控[J]. 中国激光, 2018, 45(6): 0606005. Yu Lin, Ying Zhong, Haitao Liu. Modification of Single Photon Fluorescence Emission of Single Quantum Dots with Different Substrates[J]. Chinese Journal of Lasers, 2018, 45(6): 0606005.
PDF全文
