Chinese Optics Letters, 2015, 13 (3): 031401, Published Online: Sep. 25, 2018  

Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

Author Affiliations
1 Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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小波 李, 永清 黄, 俊 王, 晓峰 段, 瑞康 张, 弘 李业, 正 刘, 琦 王, 霞 张, 晓敏 任. Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates[J]. Chinese Optics Letters, 2015, 13(3): 031401.

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小波 李, 永清 黄, 俊 王, 晓峰 段, 瑞康 张, 弘 李业, 正 刘, 琦 王, 霞 张, 晓敏 任. Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates[J]. Chinese Optics Letters, 2015, 13(3): 031401.

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