Metamorphic growth of 1.55  μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

小波 李; 永清 黄; 俊 王; 晓峰 段; 瑞康 张; 弘 李业; 正 刘; 琦 王; 霞 张; 晓敏 任

doi:doi:10.3788/COL201513.031401

Chinese Optics Letters, 2015, 13 (3): 031401, Published Online: Sep. 25, 2018

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

小波李 ¹永清黄 ^1,*俊王 ¹晓峰段 ¹瑞康张 ²弘李业 ¹正刘 ¹琦王 ¹霞张 ¹晓敏任 ^1,**

Author Affiliations

¹ Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China

² Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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小波李, 永清黄, 俊王, 晓峰段, 瑞康张, 弘李业, 正刘, 琦王, 霞张, 晓敏任. Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates[J]. Chinese Optics Letters, 2015, 13(3): 031401.

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

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