杂质与缺陷对GaMnAs光学特性影响的研究
钟玉杰, 程顺昌, 苏平, 龚敏, 石瑞英, 曹先存, 史同飞. 杂质与缺陷对GaMnAs光学特性影响的研究[J]. 光散射学报, 2009, 21(3): 241.
ZHONG Yu-jie, CHENG Shun-chang, SU Ping, GONG Min, SHI Rui-ying, CAO Xian-cun, SHI Tong-fei. Studies of Optics Property Influenced by Impurity and Defects in GaMnAs[J]. The Journal of Light Scattering, 2009, 21(3): 241.
[1] Shinobu Ohya, Kenichi Ohno, Masaaki Tanaka. Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs［J］. Appl. Phys. Lett, 2007, 90: 112503.
[2] Mack S, Myers R C, Heron J T, et al. Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs［J］. Appl. Phys. Lett, 2008, 92: 192502.
[3] Rozkotová E, Němec P, Horodyská P, et al. Light-induced magnetization precession in GaMnAs［J］, Appl. Phys. Lett, 2008, 92: 122507.
[4] Máca F, Maek J. Electronic states in Ga1-xMnxAs: Substitutional versus interstitial position of Mn［J］. Phys. Rev. B, 2002, 65: 235209.
[5] Shen A, Matsukura F, Ohno H, et al. Low-temperature molecular beam epitaxial growth of GaAs and (Ga, Mn)As［J］. Journal of Crystal Growth. 1999, 201-202: 679-683.
[6] Srensen B S, Lindelof P E, Sadowski J, et al. Effect of annealing on carrier density and Curie temperature in epitaxial (Ga, Mn)As thin films［J］. Appl. Phys. Lett, 2003, 82: 2287-2289.
[7] Erwin S C, Petukhov A G. Self-compensation in manganese-doped ferromagnetic semiconductors［J］. Phys. Rev. Lett, 2002, 89: 227201.
[8] Sadowski J, Domagala J. Z. Influence of defects on the lattice constant of GaMnAs［J］. Phys. Rev. B, 2004, 69: 075206.
[9] Ursula Wurstbauer, Matthias Sperl, Marcello Soda, et al. Ferromagnetic GaMnAs grown on （110）faced GaAs［J］. Appl. Phys. Lett, 2008, 92: 102506.
[10] Yu K M, Walukiewicz W, Wojtowicz T, et al. Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature［J］. Phys. Rev. B, 2002, 201303.
[11] Liu X, Prasad A, Nishio J, et al. Native point defects in low-temperature-grown GaAs［J］. Appl. Phys. Lett, 1995, 67: 279-281.
[12] Staab T E, Nieminen R M, Gebauer J, et al. Do Arsenic Interstitials Really Exist in As-Rich GaAs［J］. Phys. Rev. Lett, 2001, 87: 045504.
[13] Guo F, Zhang J, Gong M, et al. Photoluminescence studies on the defects of SiGe/ Si heterojunction［J］. The Journal of Light Scattering, 2007, 19: 252-256.
[14] 刘恩科, 朱秉升, 罗晋生. 半导体物理学［M］. 电子工业出版社, 2003年, 第六版.
[15] 沈学础. 半导体光谱与光学性质［M］. 科学出版社, 2003年, 第二版.
[16] Zhuravlev K S, Shamirzaev T S, Yakusheva N A. Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt［J］. Semiconductors, 1998, 32.
[17] Parchinskiy P B, Bobylev A Y, Vlasov S I, et al. Study of photoluminescence spectra of GaMnAs produced by Low-Temperature molecular beam epitaxy［J］. Electronic and Optical Proerties of Semiconductors. 2007, 41: 1163-1167.
[18] Parchinskiy P B, Fu Cheng Yu, Se Young Jeong, et al. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters［J］. Applied Surface Science, 2006, 253: 515-518.
[19] Xu J F, Liu S W, Xiao M, et al. Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy［J］. Journal of Crystal Growth, 2007, 301-302: 101–104.
[20] Yu K M, Walukiewicz W, Wojtowicz T, et al. Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature［J］. Phys. Rev. B, 2002, 65: 201303.
[21] Jungwirth T, Jairo Sinova, Masek J, et al. Theory of ferromagnetic (III, Mn)V semiconductors［J］. Materials Science, 2006.
[22] 范伟, 徐晓轩, 孙秀峰. InGaAs/GaAs单量子阱PL谱的温度变化特性［J］. 光散射学报, 2008, （2）: 182-185.
[23] 林雪娇, 蔡加法, 吴正云. InGaAsN量子阱的光致发光谱研究［J］. 光散射学报, 2004, （1）: 70-75.
钟玉杰, 程顺昌, 苏平, 龚敏, 石瑞英, 曹先存, 史同飞. 杂质与缺陷对GaMnAs光学特性影响的研究[J]. 光散射学报, 2009, 21(3): 241. ZHONG Yu-jie, CHENG Shun-chang, SU Ping, GONG Min, SHI Rui-ying, CAO Xian-cun, SHI Tong-fei. Studies of Optics Property Influenced by Impurity and Defects in GaMnAs[J]. The Journal of Light Scattering, 2009, 21(3): 241.
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