激光微细加工中微小曝光区域的计算机温度测量系统
[1] Ye Yutang. Laser Assisted Microprocessing [M]. The first edition. Chengdu: Press of University of Electronic Science and Technology, 1995
叶玉堂. 激光微细加工[M].第一版. 成都:电子科技大学出版社,1995
[2] . Yu. Bonchik, S. G. Kijak, Z. Gotra et al.. Laser technology for submicron-doped layers formation in semiconductors[J]. Optics & Laser Technology, 2001, 33: 589-591.
[4] Ye Yutang, Li Zhongdong, Hong Yonghe et al.. Continuous wave CO2 laser induced diffusion of Zn into GaAs using a solid state diffusion source [J]. Chinese J. Lasers, 1997, A24(3):237～241
叶玉堂,李忠东,洪永和等. 用固态杂质源在GaAs衬底上实现的连续波CO2激光诱导Zn扩散[J]. 中国激光, 1997, A24(3):237～241
[5] . J. Ehrlich, J. Y. Tsao. Submicrometer-linewidth doping and relief definition in silicon by laser-controlled diffusion[J]. Appl. Phys. Lett., 1982, 41(3): 297-299.
[6] . Baumgartner, W. Wegscheider, M. Bichler et al.. Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure[J]. Appl. Phys. Lett., 1997, 70(16): 2135-2137.
[7] . Wilman. Novel and nonintrusive optical thermometer[J]. Appl. Phys. Lett., 1992, 60(5): 524-526.
[8] . Stritzker, A. Pospieszczyk, J. A. Tagle. Measurement of lattice temperature of silicon during pulsed laser annealing[J]. Phys. Rev. Lett., 1981, 47(5): 356-358.
[9] . . Remote sensing of the temperature of the exposed region in laser assisted diffusion[J]. Journal of Applied Sciences, 1997, 15(4): 413-417.
[10] . Lax. Temperature rise induced by a laser beam[J]. J. Appl. Phys., 1977, 48(9): 3919-3924.
吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. 激光微细加工中微小曝光区域的计算机温度测量系统[J]. 中国激光, 2004, 31(3): 363. 吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. Computer-Controlled Temperature Measurement System for the Small Exposed Region in Laser Assisted Microprocessing[J]. Chinese Journal of Lasers, 2004, 31(3): 363.
PDF全文
