中国激光, 2010, 37 (8): 2139, 网络出版: 2010-08-13   

355 nm纳秒脉冲激光在硅表面照射形成微结构及其荧光检测

Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study
作者单位
1 天津大学 精密测试技术及仪器国家重点实验室,天津 300072
2 约翰·开普勒大学 实验物理研究所,林茨 A-4040,奥地利
摘要
利用自主研发设计的波长为355 nm的纳秒脉冲激光微加工系统,在硅(100)表面进行照射加工,形成了线槽宽度约25 μm的微结构。利用荧光显微检测和光谱检测等观测手段,对形成的线槽结构进行观测分析,发现加工过的区域可以发生强烈的光致发光现象。使用波长范围为400-440 nm的照明光照射加工区域,可以激发出波长范围为400-700 nm的荧光,且荧光光强随时间呈现指数衰减变化。从而证实了纳秒脉冲激光的照射加工改变了硅材料的光学属性,为利用脉冲激光加工制备硅基光电器件和结构进行了探索。
Abstract
Slots with a width of about 25 μm is fabricated on Si (100) using a homebuilt micromachining system based on a 355 nm nanosecond pulse laser. Strong photoluminescence (PL) emission from the fabricated area is characterized by fluorescence microscopy and local fluorescence spectroscopy. Fluorescence emission in the wavelength range of 400-700 nm is detected with excitation wavelength range of 400-440 nm. Furthermore,a strong decay of the PL intensity is observed as a function of irradiation time. It can be confirmed that the optical property of silicon is changed after nanosecond pulsed laser fabrication. And a potential method to produce optoelectronic device based on silicon is tried with pulsed laser fabrication.
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刘春阳, 孙立东, 傅星, 孙凤鸣, 胡春光, . 355 nm纳秒脉冲激光在硅表面照射形成微结构及其荧光检测[J]. 中国激光, 2010, 37(8): 2139. 刘春阳, 孙立东, 傅星, 孙凤鸣, 胡春光, Peter Zeppenfeld. Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study[J]. Chinese Journal of Lasers, 2010, 37(8): 2139.

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