太赫兹InP基InAlAs/InGaAs PHEMTs的研制
[1] Gunnarsson Sten E, Wadefalk N, Zirath H, et al. A 220 GHz (G-Band) Microstrip MMIC Single-Ended Resistive Mixer [J]. IEEE Microwave and wireless components letters. 2008, 18(3):215-217.
[2] Leuther A, Tessmann A, Damman M, et al. 50 nm MHEMT Technology for G-and H-Band MMICs [C]. 2007 International Conference on Indium Phosphide and Related Materials. Matsue, Japan, 2007:24-27.
[3] Kim D-H, del Alamo J A. 30 nm InAs PHEMTs With Ft=644GHz and fmax=681GHz [J]. IEEE Electron Device Letters, 2010, 31(8): 806-808.
[4] Kim D-H, del Alamo J A. 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz [J]. IEEE Electron Device Letters, 2008, 29(8): 830-833.
[5] Deal W, Mei X B, Kevin M K, et al. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors [J]. IEEE Transactions On Terahertz Science and Technology, 2011,1(1): 25-32.
[6] Gaudenzio Meneghesso, Neviani A, Oesternolt, et al. On-state and off-state breakdown in GaInAs/InP composite-channel HEMTs with variable gaInAs channel thickness [J]. IEEE Transactions On Electron Devices, 1999, 46(1): 2-9.
[7] Bahl S R, del Alamo J A. Breakdown Voltage Enhancement from Channel Quantization in InAlAs/n+-InGaAs HFETs [J]. IEEE Electron Device Letters, 1992, 13(2):123-125.
[8] Wang Z M, Luo X B, Yu W H, et al. 2D Simulations of Kink Phenomenon in InAlAs/InGaAs/InP HEMTs [C]. IEEE 2013 International Conference on Microwave Technology & Computational Electromagnetics. Qingdao, China, 2013:320-323.
[9] Grundbacher R, Lai R, Barsky M, et al. 0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band simulation: 14th Indium phosphide and related material conference IPRM, 2002 [C]. Stockholm, Sweden, 2002: 455-458.
[10] Scholz R F, Korndorfer F, Senapati B, et al. Advanced technique for broadband on-wafer RF device characterization [C]. 63rd ARFTG Microwave Measurements Conference Digest Spring. 2004:83-90.
[11] Voinigescu S P, Dacquay E, Adinolfi V, et al. Characterization and Modeling of an SiGe HBT technology for transceiver applications in the 100-300 GHz range [J]. IEEE Trans Micro Theory Tech, 2012,60(12):4024.
[13] Zhong Y H, Zhang Y M, Zhang Y M, et al. 0.15 μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz [J]. Chin. Phys. B, 2013, 22(12):128503.
[14] Liu C H, Mei X B, Chou Y C, et al. Sub-mW operation of InP HEMT X-band Low-Noise amplifiers for low power applications[C]. 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, Oct 11–14, 2009, Greensboro, USA, p. 1.
[15] Liu L, Alt A R, Benedickter H, et al. InP-HEMT X-band low-noise amplifier with ultralow 0.6 mW power consumption [J]. IEEE Electron Device Letter. 2012, 33(2), 209-211.
[16] Tessmann A. 220 GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications [J]. IEEE Journal of Solid-State Circuits. 2005,40(10):2070-2076.
[17] Zhong Y H, Wang X T, Su Y B, et al. An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz [J]. Journal of Semiconductors, 2012, 33(7):074004.
[18] Smith D, Dambrine G, Orlhac J-C. Industrial MHEMT technologies for 80~220 GHz applications [C]. Proceedings of the 3rd European Microwave Integrated Circuits Conference. Amsterdam, The Netherlands, 2008: 214-217.
王志明, 黄辉, 胡志富, 赵卓彬, 崔玉兴, 孙希国, 李亮, 付兴昌, 吕昕. 太赫兹InP基InAlAs/InGaAs PHEMTs的研制[J]. 红外与毫米波学报, 2018, 37(2): 135. WANG Zhi-Ming, HUANG Hui, HU Zhi-Fu, ZHAO Zhuo-Bin, CUI Yu-Xing, SUN Xi-Guo, LI Liang, FU Xing-Chang, LYU Xin. Design and realization of THz InAlAs/InGaAs InP-based PHEMTs[J]. Journal of Infrared and Millimeter Waves, 2018, 37(2): 135.
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