红外与毫米波学报, 2019, 38 (1): 61, 网络出版: 2019-03-19  

一种片上集成模拟信号累加结构的CMOS-TDI传感器噪声建模与分析

Noise analysis of a CMOS TDI sensor with on chip signal accumulation in analog domain
计成 1,2,*陈永平 1
作者单位
1 中国科学院上海技术物理研究所, 上海 200083
2 中国科学院大学, 北京 100049
引用该论文

计成, 陈永平. 一种片上集成模拟信号累加结构的CMOS-TDI传感器噪声建模与分析[J]. 红外与毫米波学报, 2019, 38(1): 61.

JI Cheng, Chen Yong-Ping. Noise analysis of a CMOS TDI sensor with on chip signal accumulation in analog domain[J]. Journal of Infrared and Millimeter Waves, 2019, 38(1): 61.

参考文献

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[6] Ceylan, Omer, et al. "Implementation of TDI based digital pixel ROIC with 15 μm pixel pitch." Infrared Technology and Applications XLII. Vol. 9819. International Society for Optics and Photonics, 2016.

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[9] Kawai N, Kawahito S. Noise analysis of high-gain, low-noise column readout circuits for CMOS image sensors[J]. IEEE Transactions on Electron Devices, 2004, 51(2): 185-194.

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[13] Nie, Kaiming, Jiangtao Xu, and Zhiyuan Gao. "A 128-stage CMOS TDI image sensor with on-chip digital accumulator." IEEE Sensors Journal 16.5 (2016): 1319-1324.

计成, 陈永平. 一种片上集成模拟信号累加结构的CMOS-TDI传感器噪声建模与分析[J]. 红外与毫米波学报, 2019, 38(1): 61. JI Cheng, Chen Yong-Ping. Noise analysis of a CMOS TDI sensor with on chip signal accumulation in analog domain[J]. Journal of Infrared and Millimeter Waves, 2019, 38(1): 61.

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