High accuracy numerical solutions for band structures in strained quantum well semiconductor optical amplifiers

Xi HUANG; Cui QIN; Xinliang ZHANG

doi:doi:10.1007/s12200-011-0220-3

Frontiers of Optoelectronics, 2011, 4 (3): 330, 网络出版: 2012-09-21

High accuracy numerical solutions for band structures in strained quantum well semiconductor optical amplifiers

论文大纲

Xi HUANG Cui QIN Xinliang ZHANG ^*

作者单位

Wuhan National Laboratory for Optoelectronics, College of Optoelectonic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

semiconductor optical amplifier quantum well devices plane wave expansion method finite difference method

摘要

Abstract

In this paper, we have calculated the band structure of strained quantum well (QW) semiconductor optical amplifiers (SOAs) by using plane wave expansion method (PWEM) and finite difference method (FDM), respectively. The difference between these two numerical methods is presented. First, the solution of Schr?dinger’s equation in a conduction band for parabolic potential well is used to check the validity and accuracy of these two numerical methods. For the PWEM, its stability and computational speed are investigated as a function of the number of plane waves and the period of QW. For FDM, effects of mesh size and QW width on its accuracy and calculation time are discussed. Finally, we find that the computational speed of FDM generally is faster than that of PWEM. However, the PWEM is more efficient than the FDM when wider SOAs are needed to be calculated. Therefore, to obtain high accuracy and efficient numerical solutions for band structures, numerical methods should be selected depending on required accuracy, device structure and further applications.

参考文献

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Xi HUANG, Cui QIN, Xinliang ZHANG. High accuracy numerical solutions for band structures in strained quantum well semiconductor optical amplifiers[J]. Frontiers of Optoelectronics, 2011, 4(3): 330. Xi HUANG, Cui QIN, Xinliang ZHANG. High accuracy numerical solutions for band structures in strained quantum well semiconductor optical amplifiers[J]. Frontiers of Optoelectronics, 2011, 4(3): 330.

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