1 南京邮电大学 通信与信息工程学院 量子信息技术研究所, 南京 210003
2 南京邮电大学 通信与信息工程学院 宽带无线与传感网技术教育部重点实验室, 南京 210003
基于Brańczyk的理论工作, 考虑干涉滤波片的谱函数对干涉结果的影响, 推导出更加普适的Hong-Ou-Mandel干涉符合概率公式, 从而增加干涉实验的可操控性.用带宽不同的干涉滤波片系统研究了Hong-Ou-Mandel干涉现象, 得到与理论预测相吻合的实验结果.实验数据和理论仿真均显示, 通过使用不同带宽的干涉滤波片可以灵活调节干涉曲线, 以获得较高的平台符合计数率和干涉可见度.实验中测得的干涉可见度均高于97%, 最高达到99.9%, 验证了实验方案的可靠性.研究结果对于同类的量子干涉实验也具有参考价值.
量子光学 双光子过程 量子干涉装置 光子 可见度 Quantum optics Two photon processes Quantum interference devices Photons Visibility
Wuhan National Laboratory for Optoelectronics, College of Optoelectonic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Frontiers of Optoelectronics
2011, 4(3): 330
阜阳师范学院物理与电子科学学院, 安徽 阜阳236029
鉴于一种新形式的W类纠缠态作为纠缠通道可以实现概率为100%的量子隐形传态和密集编码的特殊优势，提出了一个基于超导量子相干装置在单模谐振腔中制备该W类 纠缠态的方案。在这个方案里，只需利用超导量子相干装置和腔场发生共振相互作用，一步便可制备W类纠缠态。在目前的腔QED技术条件下, 该方案是可以实现的。
量子信息 W类纠缠态 超导量子相干装置 共振 quantum information W-class state superconducting quantum interference devices resonance
Author Affiliations
Abstract
1 Wuhan Accelink Technologies Co., Ltd, Wuhan Research Institute of Post and Telecommunication, Wuhan 430074
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.
140.5960 semiconductor lasers 230.5590 quantum-well devices 250.0250 optoelectronics Chinese Optics Letters
2005, 3(8): 08466
Author Affiliations
Abstract
1 Ultrafast Laser Laboratory, School of Precision Instru. Optoelectron. Eng., Tianjin University, Key Lab. Optoelectron. Info. Technical Sci. (Tianjin), EMC
2 Dept. Appl. Phys., Tianjin University
3 Shandong University
4 Institute of Semiconductors, Chinese Academy of Sciences
5 Beijing University of Technology
A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.
140.5680 rare earth and transition metal solid-state lasers 140.4050 mode-locked lasers 230.5590 quantum-well devices Chinese Optics Letters
2004, 2(8): 08466
Author Affiliations
Abstract
National Center of Optoelectronics Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
250.3140 integrated optoelectronic circuits 140.3490 lasers distributed-feedback 250.7360 waveguide modulators 230.5590 quantum-well devices Chinese Optics Letters
2004, 2(4): 04226
Author Affiliations
Abstract
1 Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University
2 Key Laboratory of Optoelectronic Information Technical Science, EMC, Tianjin 300072
Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor saturable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.
140.5680 rare earth and transition metal solid-state lasers 140.4050 mode-locked lasers 140.7090 ultrafast lasers 230.5590 quantum-well devices Chinese Optics Letters
2003, 1(12): 12695
Author Affiliations
Abstract
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275
Direct calculations of absorption spectra for multi-quantum well structures by extracting field distributions at well positions are performed. Results demonstrate the previously reported Bragg suppression, and agree exactly with the indirect calculation by linear dispersion theory. This reveals that Bragg suppression effect in fact originates from the remarkably decreased intensities at well positions by Bragg interference condition, rather than from the formation of supperradiant modes.
160.6000 semiconductors including MQW 230.5590 quantum-well devices 300.1030 absorption Chinese Optics Letters
2003, 1(5): 05299
